FDP2552

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

51nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Rise Time :

29ns

Radiation Hardening :

No

FET Type :

N-Channel

ECCN Code :

EAR99

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

5A Ta 37A Tc

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

2800pF @ 25V

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

37A

Width :

4.83mm

Drain to Source Breakdown Voltage :

150V

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Number of Terminations :

3

Resistance :

32mOhm

Package / Case :

TO-220-3

Fall Time (Typ) :

29 ns

Operating Temperature :

-55°C~175°C TJ

Current Rating :

37A

Lead Free :

Lead Free

Factory Lead Time :

9 Weeks

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

Number of Elements :

1

Turn On Delay Time :

12 ns

Rds On (Max) @ Id, Vgs :

36m Ω @ 16A, 10V

Voltage - Rated DC :

150V

JESD-609 Code :

e3

Published :

2002

Height :

9.4mm

Turn-Off Delay Time :

36 ns

Power Dissipation :

150W

Series :

PowerTrench®

Mount :

Through Hole

JEDEC-95 Code :

TO-220AB

Vgs (Max) :

±20V

Weight :

1.8g

Contact Plating :

Tin

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Power Dissipation-Max :

150W Tc

Drain Current-Max (Abs) (ID) :

5A

Pbfree Code :

yes

Length :

10.67mm

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)