FDP2710
- Mfr.Part #
- FDP2710
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 50A TO220-3
- Stock
- 12,959
- In Stock :
- 12,959
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation :
- 260W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 50A
- Fall Time (Typ) :
- 154 ns
- Element Configuration :
- Single
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Height :
- 16.51mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Series :
- PowerTrench®
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate to Source Voltage (Vgs) :
- 30V
- Terminal Finish :
- Tin (Sn)
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- TO-220-3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Turn On Delay Time :
- 80 ns
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Resistance :
- 42.5mOhm
- Turn-Off Delay Time :
- 112 ns
- Mount :
- Through Hole
- FET Type :
- N-Channel
- Rise Time :
- 252ns
- Pbfree Code :
- yes
- Rds On (Max) @ Id, Vgs :
- 42.5m Ω @ 25A, 10V
- Power Dissipation-Max :
- 260W Tc
- JEDEC-95 Code :
- TO-220AB
- Factory Lead Time :
- 9 Weeks
- JESD-609 Code :
- e3
- Drain to Source Breakdown Voltage :
- 250V
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- Length :
- 10.67mm
- Width :
- 4.83mm
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2013
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Packaging :
- Tube
- Gate Charge (Qg) (Max) @ Vgs :
- 101nC @ 10V
- Vgs (Max) :
- ±30V
- Weight :
- 1.8g
- Qualification Status :
- Not Qualified
- Input Capacitance (Ciss) (Max) @ Vds :
- 7280pF @ 25V
- Datasheets
- FDP2710

N-Channel Tube 42.5m Ω @ 25A, 10V ±30V 7280pF @ 25V 101nC @ 10V TO-220-3
FDP2710 Description
The N-channel MOSFET FDP2710 is produced by Fairchild's advanced power channel process, which is tailored to minimize on-resistance while maintaining higher switching performance.
FDP2710 Features
·RDS(on)=36.3mΩ(Typ)@VGs=10VID=25A·Fast Switching Speed·Low Gate Charge
·High Performance Trench technologyfor ExtremelyLow Rps(on)
.High Power and Current Handing Capability RoHS Compliant
FDP2710 Applications
Consumer Appliances
·Synchranous Rectification
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