FDN338P
- Mfr.Part #
- FDN338P
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 1.6A SUPERSOT3
- Stock
- 9
- In Stock :
- 9
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 451pF @ 10V
- Turn-Off Delay Time :
- 16 ns
- Threshold Voltage :
- -800mV
- Radiation Hardening :
- No
- Continuous Drain Current (ID) :
- 1.6A
- Nominal Vgs :
- -800 mV
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Rds On (Max) @ Id, Vgs :
- 115m Ω @ 1.6A, 4.5V
- Height :
- 1.22mm
- Mounting Type :
- Surface Mount
- Width :
- 3.05mm
- Weight :
- 30mg
- JESD-609 Code :
- e3
- Series :
- PowerTrench®
- Mount :
- Surface Mount
- Published :
- 2001
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 500mW
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Rise Time :
- 11ns
- Element Configuration :
- Single
- Resistance :
- 115mOhm
- Pbfree Code :
- yes
- Gate to Source Voltage (Vgs) :
- 8V
- Number of Pins :
- 3
- Current Rating :
- -1.6A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- P-Channel
- Vgs (Max) :
- ±8V
- Max Junction Temperature (Tj) :
- 150°C
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Factory Lead Time :
- 10 Weeks
- Power Dissipation-Max :
- 500mW Ta
- Number of Channels :
- 1
- Packaging :
- Tape and Reel (TR)
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Position :
- Dual
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- -20V
- Gate Charge (Qg) (Max) @ Vgs :
- 6.2nC @ 4.5V
- Turn On Delay Time :
- 10 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Current - Continuous Drain (Id) @ 25°C :
- 1.6A Ta
- ECCN Code :
- EAR99
- Contact Plating :
- Tin
- Terminal Form :
- Gull wing
- REACH SVHC :
- No SVHC
- Drain to Source Voltage (Vdss) :
- 20V
- Drain to Source Breakdown Voltage :
- -20V
- Number of Elements :
- 1
- Fall Time (Typ) :
- 11 ns
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- FDN338P
FDN338P Documents

P-Channel Tape & Reel (TR) 115m Ω @ 1.6A, 4.5V ±8V 451pF @ 10V 6.2nC @ 4.5V 20V TO-236-3, SC-59, SOT-23-3
The FDN338P is a 2.5V P-channel MOSFET that uses the PowerTrench? low voltage technology. It was designed with battery power management and load switching in mind. In the same footprint, the SuperSOTTM -3 has a lower RDS (ON) and a 30% better power handling capabilities than the SOT23.
FDN338P Features
–1.6 A, –20 V
RDS(ON)= 115 mΩ @ VGS = –4.5 V
RDS(ON) = 155 mΩ @ VGS = –2.5 V
Fast switching speed
High performance trench technology for extremely low RDS(ON)
SuperSOT? -3 provides low RDS(ON) and 30% higherpower handling capability than SOT23 in the samefootprint
FDN338P Applications
Battery Management
Load Switch
Battery Protection
This product is general usage and suitable for many different applications
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