FDC6506P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Length :

3mm

Mount :

Surface Mount

Turn-Off Delay Time :

14 ns

Series :

PowerTrench®

Gate Charge (Qg) (Max) @ Vgs :

3.5nC @ 10V

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

170m Ω @ 1.8A, 10V

Weight :

36mg

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

6

ECCN Code :

EAR99

FET Type :

2 P-Channel (Dual)

Dual Supply Voltage :

30V

Power - Max :

700mW

Published :

1999

Terminal Form :

Gull wing

Resistance :

170mOhm

Factory Lead Time :

10 Weeks

Transistor Element Material :

SILICON

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Additional Feature :

LOGIC LEVEL COMPATIBLE

REACH SVHC :

No SVHC

Power Dissipation :

960mW

Contact Plating :

Tin

Rise Time :

8ns

Number of Pins :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Voltage - Rated DC :

-30V

Mounting Type :

Surface Mount

Number of Elements :

2

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

-30V

Continuous Drain Current (ID) :

1.8A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Application :

SWITCHING

Threshold Voltage :

-1.8V

Input Capacitance (Ciss) (Max) @ Vds :

190pF @ 15V

Number of Channels :

2

Radiation Hardening :

No

JESD-609 Code :

e3

Current Rating :

-1.8A

Width :

1.7mm

Operating Mode :

ENHANCEMENT MODE

Height :

1.1mm

Vgs(th) (Max) @ Id :

3V @ 250µA

Fall Time (Typ) :

8 ns

Element Configuration :

Dual

Max Power Dissipation :

960mW

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

7 ns

Max Junction Temperature (Tj) :

150°C

Packaging :

Tape and Reel (TR)

FET Feature :

Logic Level Gate