FDC6420C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Dual Supply Voltage :

20V

Current - Continuous Drain (Id) @ 25°C :

3A 2.2A

RoHS Status :

ROHS3 Compliant

Published :

2017

Number of Elements :

2

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Power Dissipation :

960mW

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Finish :

Tin (Sn)

Nominal Vgs :

900 mV

Max Power Dissipation :

700mW

Gate to Source Voltage (Vgs) :

12V

Series :

PowerTrench®

Termination :

SMD/SMT

Fall Time (Typ) :

12 ns

Gate Charge (Qg) (Max) @ Vgs :

4.6nC @ 4.5V

Weight :

36mg

Number of Pins :

6

Continuous Drain Current (ID) :

3A

Input Capacitance (Ciss) (Max) @ Vds :

324pF @ 10V

Transistor Element Material :

SILICON

Rise Time :

12ns

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Drain Current-Max (Abs) (ID) :

3A

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Number of Terminations :

6

Mount :

Surface Mount

Terminal Form :

Gull wing

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Pbfree Code :

yes

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

20V

Height :

900μm

Package / Case :

SOT-23-6 Thin, TSOT-23-6

FET Type :

N and P-Channel

Transistor Application :

SWITCHING

Turn-Off Delay Time :

10 ns

Threshold Voltage :

900mV

REACH SVHC :

No SVHC

Max Junction Temperature (Tj) :

150°C

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistance :

70mOhm

FET Feature :

Logic Level Gate

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

10 Weeks

Element Configuration :

Dual

Number of Channels :

2

Current Rating :

3A

Rds On (Max) @ Id, Vgs :

70m Ω @ 3A, 4.5V

Packaging :

Tape and Reel (TR)