FDC6401N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Fall Time (Typ) :

1.6 ns

Input Capacitance (Ciss) (Max) @ Vds :

324pF @ 10V

Number of Pins :

6

Max Junction Temperature (Tj) :

150°C

Height :

1.1mm

Transistor Application :

SWITCHING

Number of Elements :

2

Resistance :

70mOhm

Contact Plating :

Tin

Series :

PowerTrench®

RoHS Status :

ROHS3 Compliant

FET Feature :

Standard

Gate to Source Voltage (Vgs) :

12V

Terminal Form :

Gull wing

Length :

3mm

Drain Current-Max (Abs) (ID) :

3A

Width :

1.7mm

Factory Lead Time :

10 Weeks

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Current Rating :

3A

Gate Charge (Qg) (Max) @ Vgs :

4.6nC @ 4.5V

Dual Supply Voltage :

20V

Turn-Off Delay Time :

13 ns

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Lead Free :

Lead Free

Continuous Drain Current (ID) :

3A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Radiation Hardening :

No

Power - Max :

700mW

Number of Terminations :

6

ECCN Code :

EAR99

Nominal Vgs :

900 mV

Turn On Delay Time :

5 ns

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Voltage - Rated DC :

20V

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

Published :

2017

Weight :

36mg

Drain to Source Breakdown Voltage :

20V

Power Dissipation :

960mW

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Rise Time :

7ns

Pbfree Code :

yes

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

70m Ω @ 3A, 4.5V

Max Power Dissipation :

960mW

Termination :

SMD/SMT

JESD-609 Code :

e3

Number of Channels :

2

Element Configuration :

Dual

Threshold Voltage :

900mV

Packaging :

Tape and Reel (TR)

FET Type :

2 N-Channel (Dual)