FDC6401N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Terminal Form :

Gull wing

Max Power Dissipation :

960mW

Turn On Delay Time :

5 ns

Nominal Vgs :

900 mV

Power Dissipation :

960mW

Continuous Drain Current (ID) :

3A

Max Junction Temperature (Tj) :

150°C

ECCN Code :

EAR99

Number of Channels :

2

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Threshold Voltage :

900mV

Current Rating :

3A

Series :

PowerTrench®

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

Number of Elements :

2

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

10 Weeks

Drain Current-Max (Abs) (ID) :

3A

Published :

2017

FET Type :

2 N-Channel (Dual)

Number of Terminations :

6

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Number of Pins :

6

Mount :

Surface Mount

Element Configuration :

Dual

Voltage - Rated DC :

20V

FET Feature :

Standard

Contact Plating :

Tin

Rds On (Max) @ Id, Vgs :

70m Ω @ 3A, 4.5V

Transistor Element Material :

SILICON

Rise Time :

7ns

Gate to Source Voltage (Vgs) :

12V

Turn-Off Delay Time :

13 ns

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Length :

3mm

Height :

1.1mm

Radiation Hardening :

No

Weight :

36mg

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Dual Supply Voltage :

20V

Power - Max :

700mW

Width :

1.7mm

Mounting Type :

Surface Mount

Fall Time (Typ) :

1.6 ns

JESD-609 Code :

e3

Resistance :

70mOhm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

4.6nC @ 4.5V

Pbfree Code :

yes

Lead Free :

Lead Free

Termination :

SMD/SMT

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

20V

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

324pF @ 10V