FDC6333C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Application :

SWITCHING

Number of Channels :

2

Fall Time (Typ) :

13 ns

Threshold Voltage :

1.8V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Mounting Type :

Surface Mount

Pbfree Code :

yes

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

6.6nC @ 10V

Package / Case :

SOT-23-6 Thin, TSOT-23-6

JESD-609 Code :

e3

Current Rating :

2.5A

FET Type :

N and P-Channel

Number of Elements :

2

Transistor Element Material :

SILICON

Contact Plating :

Tin

Length :

3mm

Width :

1.7mm

Weight :

36mg

Mount :

Surface Mount

Resistance :

95mOhm

Input Capacitance (Ciss) (Max) @ Vds :

282pF @ 15V

Number of Terminations :

6

Nominal Vgs :

1.8 V

Terminal Form :

Gull wing

Max Junction Temperature (Tj) :

150°C

Factory Lead Time :

10 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Radiation Hardening :

No

Power Dissipation :

960mW

Power - Max :

700mW

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Turn On Delay Time :

4.5 ns

Turn-Off Delay Time :

11 ns

FET Feature :

Logic Level Gate

Drain to Source Voltage (Vdss) :

30V

Drain to Source Breakdown Voltage :

-30V

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Dual

Rds On (Max) @ Id, Vgs :

95m Ω @ 2.5A, 10V

Published :

2017

Number of Pins :

6

Vgs(th) (Max) @ Id :

3V @ 250µA

Series :

PowerTrench®

Current - Continuous Drain (Id) @ 25°C :

2.5A 2A

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

25V

RoHS Status :

ROHS3 Compliant

Rise Time :

13ns

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

960mW

Continuous Drain Current (ID) :

2.5A

Height :

1mm