FDC6327C
- Mfr.Part #
- FDC6327C
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- MOSFET N/P-CH 20V SSOT-6
- Stock
- 2,475
- In Stock :
- 2,475
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Rise Time :
- 14ns
- Width :
- 1.7mm
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Terminal Form :
- Gull wing
- Pbfree Code :
- yes
- Length :
- 3mm
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Series :
- PowerTrench®
- Mounting Type :
- Surface Mount
- Threshold Voltage :
- 900mV
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Resistance :
- 80mOhm
- FET Type :
- N and P-Channel
- Gate to Source Voltage (Vgs) :
- 8V
- Polarity/Channel Type :
- N-CHANNEL AND P-CHANNEL
- Number of Channels :
- 2
- Factory Lead Time :
- 10 Weeks
- Power - Max :
- 700mW
- Element Configuration :
- Dual
- Number of Elements :
- 2
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- FET Feature :
- Logic Level Gate
- Mount :
- Surface Mount
- Max Power Dissipation :
- 960mW
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Height :
- 1.1mm
- Continuous Drain Current (ID) :
- 1.9A
- Gate Charge (Qg) (Max) @ Vgs :
- 4.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 325pF @ 10V
- Operating Mode :
- ENHANCEMENT MODE
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Terminal Finish :
- Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Published :
- 2000
- Radiation Hardening :
- No
- Drain to Source Breakdown Voltage :
- 20V
- Weight :
- 36mg
- Number of Pins :
- 6
- Nominal Vgs :
- 900 mV
- Current Rating :
- 2.7A
- Termination :
- SMD/SMT
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 6
- Max Junction Temperature (Tj) :
- 150°C
- Power Dissipation :
- 960mW
- REACH SVHC :
- No SVHC
- Current - Continuous Drain (Id) @ 25°C :
- 2.7A 1.9A
- Rds On (Max) @ Id, Vgs :
- 80m Ω @ 2.7A, 4.5V
- Turn-Off Delay Time :
- 14 ns
- Datasheets
- FDC6327C

FDC6327C datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDC6327C Description
These Nipp channel 2.5V MOSFET are manufactured using an advanced PowerTritch process tailored to minimize on-resistance while maintaining low gate charge for excellent switching performance. These devices are designed to provide excellent power consumption in a very small footprint and are suitable for impractical applications in larger and more expensive SO-8 and TSSOP-8 packages.
FDC6327C Features
N-Channel
?2.7A, 20V
?RDS(on) = 0.08|? @ VGS = 4.5V
?RDS(on) = 0.12|? @ VGS = 2.5V
P-Channel
?-1.6A, -20V
?RDS(on) = 0.17|? @ VGS = -4.5V
?RDS(on) = 0.25|? @ VGS = -2.5V
Fast switching speed.
Low gate charge.
High performance trench technology for extremelylow RDS(ON) .
SuperSOT? -6 package: small footprint (72% smallerthan standard SO-8); low profile (1mm thick).
FDC6327C Applications
This product is general usage and suitable for many different applications.
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