FDC6321C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Height :

1.1mm

Element Configuration :

Dual

Turn On Delay Time :

3 ns

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Power - Max :

700mW

Packaging :

Tape and Reel (TR)

Number of Pins :

6

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

450m Ω @ 500mA, 4.5V

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Number of Elements :

2

Operating Temperature :

-55°C~150°C TJ

REACH SVHC :

No SVHC

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Type :

N and P-Channel

Mounting Type :

Surface Mount

Threshold Voltage :

800mV

Transistor Element Material :

SILICON

Dual Supply Voltage :

25V

Number of Terminations :

6

Power Dissipation :

900mW

Mount :

Surface Mount

Width :

1.7mm

Factory Lead Time :

10 Weeks

FET Feature :

Logic Level Gate

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

680mA 460mA

Rise Time :

9ns

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Gate to Source Voltage (Vgs) :

8V

Continuous Drain Current (ID) :

460mA

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 10V

Contact Plating :

Tin

Length :

3mm

Published :

2015

Resistance :

450mOhm

Number of Channels :

2

Terminal Form :

Gull wing

Turn-Off Delay Time :

55 ns

Current Rating :

680mA

Fall Time (Typ) :

9 ns

Nominal Vgs :

800 mV

Max Power Dissipation :

900mW

RoHS Status :

ROHS3 Compliant

Weight :

36mg

Pbfree Code :

yes

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Gate Charge (Qg) (Max) @ Vgs :

2.3nC @ 5V

Feedback Cap-Max (Crss) :

9 pF

Drain to Source Breakdown Voltage :

25V