FDC6320C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Pins :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

850mV

Pbfree Code :

yes

Radiation Hardening :

No

FET Feature :

Logic Level Gate

RoHS Status :

ROHS3 Compliant

Dual Supply Voltage :

25V

Number of Terminations :

6

Rds On (Max) @ Id, Vgs :

4 Ω @ 400mA, 4.5V

Current - Continuous Drain (Id) @ 25°C :

220mA 120mA

Weight :

36mg

Transistor Application :

SWITCHING

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Input Capacitance (Ciss) (Max) @ Vds :

9.5pF @ 10V

ECCN Code :

EAR99

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

0.4nC @ 4.5V

Termination :

SMD/SMT

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Fall Time (Typ) :

6 ns

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Mount :

Surface Mount

Current Rating :

220mA

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

25V

Operating Mode :

ENHANCEMENT MODE

Resistance :

4Ohm

Additional Feature :

LOGIC LEVEL COMPATIBLE

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Turn-Off Delay Time :

7.4 ns

Max Power Dissipation :

700mW

Factory Lead Time :

10 Weeks

Rise Time :

6ns

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Gate to Source Voltage (Vgs) :

8V

Power Dissipation :

900mW

Number of Elements :

2

Continuous Drain Current (ID) :

220mA

Terminal Finish :

Tin (Sn)

FET Type :

N and P-Channel

Nominal Vgs :

850 mV

Published :

1997

Element Configuration :

Dual