FDC6320C

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Pins :

6

Gate Charge (Qg) (Max) @ Vgs :

0.4nC @ 4.5V

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

850mV

Published :

1997

Terminal Form :

Gull wing

Drain to Source Breakdown Voltage :

25V

Turn-Off Delay Time :

7.4 ns

Input Capacitance (Ciss) (Max) @ Vds :

9.5pF @ 10V

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Radiation Hardening :

No

Dual Supply Voltage :

25V

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Factory Lead Time :

10 Weeks

FET Type :

N and P-Channel

Terminal Finish :

Tin (Sn)

Mount :

Surface Mount

Rise Time :

6ns

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

220mA

Max Power Dissipation :

700mW

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

220mA 120mA

Gate to Source Voltage (Vgs) :

8V

Current Rating :

220mA

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Element Configuration :

Dual

FET Feature :

Logic Level Gate

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Rds On (Max) @ Id, Vgs :

4 Ω @ 400mA, 4.5V

Weight :

36mg

Number of Elements :

2

Number of Terminations :

6

Fall Time (Typ) :

6 ns

JESD-609 Code :

e3

Resistance :

4Ohm

Power Dissipation :

900mW

Pbfree Code :

yes

Nominal Vgs :

850 mV

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Termination :

SMD/SMT

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Additional Feature :

LOGIC LEVEL COMPATIBLE