FDC6320C

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Threshold Voltage :

850mV

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Feature :

Logic Level Gate

Gate to Source Voltage (Vgs) :

8V

Transistor Element Material :

SILICON

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

FET Type :

N and P-Channel

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Number of Terminations :

6

Continuous Drain Current (ID) :

220mA

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Additional Feature :

LOGIC LEVEL COMPATIBLE

Operating Mode :

ENHANCEMENT MODE

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Published :

1997

Current - Continuous Drain (Id) @ 25°C :

220mA 120mA

Max Power Dissipation :

700mW

REACH SVHC :

No SVHC

Power Dissipation :

900mW

Terminal Form :

Gull wing

Rise Time :

6ns

Terminal Finish :

Tin (Sn)

Number of Pins :

6

Fall Time (Typ) :

6 ns

Transistor Application :

SWITCHING

Dual Supply Voltage :

25V

Termination :

SMD/SMT

Nominal Vgs :

850 mV

Element Configuration :

Dual

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

4 Ω @ 400mA, 4.5V

Current Rating :

220mA

Turn-Off Delay Time :

7.4 ns

Resistance :

4Ohm

Lead Free :

Lead Free

Factory Lead Time :

10 Weeks

Gate Charge (Qg) (Max) @ Vgs :

0.4nC @ 4.5V

JESD-609 Code :

e3

Weight :

36mg

Drain to Source Breakdown Voltage :

25V

Number of Elements :

2

Input Capacitance (Ciss) (Max) @ Vds :

9.5pF @ 10V

Mounting Type :

Surface Mount