FDC6312P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Length :

3mm

Qualification Status :

Not Qualified

Terminal Finish :

Tin (Sn)

Turn On Delay Time :

8 ns

REACH SVHC :

No SVHC

Weight :

36mg

Lead Free :

Lead Free

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power - Max :

700mW

Resistance :

115mOhm

Mounting Type :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS Status :

ROHS3 Compliant

Number of Channels :

2

Published :

2001

Element Configuration :

Dual

Pbfree Code :

yes

Series :

PowerTrench®

Height :

1.1mm

Rds On (Max) @ Id, Vgs :

115m Ω @ 2.3A, 4.5V

Current Rating :

-2.3A

Input Capacitance (Ciss) (Max) @ Vds :

467pF @ 10V

Mount :

Surface Mount

Threshold Voltage :

-900mV

Gate to Source Voltage (Vgs) :

8V

Max Power Dissipation :

960mW

Packaging :

Tape and Reel (TR)

Termination :

SMD/SMT

Fall Time (Typ) :

13 ns

Width :

1.7mm

Dual Supply Voltage :

-20V

Gate Charge (Qg) (Max) @ Vgs :

7nC @ 4.5V

Drain to Source Voltage (Vdss) :

20V

Number of Terminations :

6

JESD-609 Code :

e3

Factory Lead Time :

10 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

2.3A

Power Dissipation :

960mW

Turn-Off Delay Time :

18 ns

Rise Time :

13ns

Transistor Element Material :

SILICON

Nominal Vgs :

-900 mV

Number of Pins :

6

Number of Elements :

2

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Breakdown Voltage :

-20V

ECCN Code :

EAR99

Max Junction Temperature (Tj) :

150°C

FET Feature :

Logic Level Gate

FET Type :

2 P-Channel (Dual)

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Voltage - Rated DC :

-20V