FDC6312P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

FET Feature :

Logic Level Gate

Pbfree Code :

yes

Number of Pins :

6

Rds On (Max) @ Id, Vgs :

115m Ω @ 2.3A, 4.5V

Element Configuration :

Dual

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Tin (Sn)

Length :

3mm

Gate Charge (Qg) (Max) @ Vgs :

7nC @ 4.5V

Power Dissipation :

960mW

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Turn-Off Delay Time :

18 ns

Drain to Source Voltage (Vdss) :

20V

Width :

1.7mm

Number of Channels :

2

Termination :

SMD/SMT

Power - Max :

700mW

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Transistor Application :

SWITCHING

Mount :

Surface Mount

Max Power Dissipation :

960mW

Threshold Voltage :

-900mV

Fall Time (Typ) :

13 ns

FET Type :

2 P-Channel (Dual)

Dual Supply Voltage :

-20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

1.1mm

Resistance :

115mOhm

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Factory Lead Time :

10 Weeks

Operating Mode :

ENHANCEMENT MODE

Published :

2001

Number of Elements :

2

Number of Terminations :

6

Turn On Delay Time :

8 ns

Qualification Status :

Not Qualified

Drain to Source Breakdown Voltage :

-20V

Rise Time :

13ns

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

8V

Max Junction Temperature (Tj) :

150°C

ECCN Code :

EAR99

Current Rating :

-2.3A

Weight :

36mg

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

PowerTrench®

Continuous Drain Current (ID) :

2.3A

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Nominal Vgs :

-900 mV

Input Capacitance (Ciss) (Max) @ Vds :

467pF @ 10V

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Voltage - Rated DC :

-20V