FDC6310P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Elements :

2

Max Power Dissipation :

960mW

Radiation Hardening :

No

Transistor Element Material :

SILICON

FET Feature :

Logic Level Gate

Power Dissipation :

960mW

FET Type :

2 P-Channel (Dual)

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Input Capacitance (Ciss) (Max) @ Vds :

337pF @ 10V

JESD-609 Code :

e3

Number of Pins :

6

Factory Lead Time :

10 Weeks

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Fall Time (Typ) :

12 ns

Terminal Form :

Gull wing

Voltage - Rated DC :

-20V

Resistance :

125mOhm

Continuous Drain Current (ID) :

2.2A

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

-20V

Lead Free :

Lead Free

REACH SVHC :

No SVHC

Mount :

Surface Mount

Turn On Delay Time :

9 ns

RoHS Status :

ROHS3 Compliant

Length :

3mm

Power - Max :

700mW

Height :

1mm

Turn-Off Delay Time :

10 ns

Published :

2001

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Threshold Voltage :

-1V

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Dual

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

-2.2A

Operating Mode :

ENHANCEMENT MODE

Weight :

36mg

ECCN Code :

EAR99

Width :

1.7mm

Series :

PowerTrench®

Number of Terminations :

6

Rds On (Max) @ Id, Vgs :

125m Ω @ 2.2A, 4.5V

Terminal Finish :

Tin (Sn)

Rise Time :

12ns

Gate to Source Voltage (Vgs) :

12V

Drain to Source Voltage (Vdss) :

20V

Gate Charge (Qg) (Max) @ Vgs :

5.2nC @ 4.5V

Pbfree Code :

yes