FDC6310P

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Resistance :

125mOhm

Mounting Type :

Surface Mount

Max Power Dissipation :

960mW

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Turn-Off Delay Time :

10 ns

Operating Temperature :

-55°C~150°C TJ

Length :

3mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

337pF @ 10V

Number of Elements :

2

Height :

1mm

JESD-609 Code :

e3

FET Type :

2 P-Channel (Dual)

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Pbfree Code :

yes

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

12V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Gate Charge (Qg) (Max) @ Vgs :

5.2nC @ 4.5V

Threshold Voltage :

-1V

Rise Time :

12ns

Voltage - Rated DC :

-20V

Fall Time (Typ) :

12 ns

Rds On (Max) @ Id, Vgs :

125m Ω @ 2.2A, 4.5V

Power Dissipation :

960mW

Mount :

Surface Mount

Continuous Drain Current (ID) :

2.2A

Number of Pins :

6

Factory Lead Time :

10 Weeks

Power - Max :

700mW

Series :

PowerTrench®

Lead Free :

Lead Free

FET Feature :

Logic Level Gate

Drain to Source Breakdown Voltage :

-20V

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin (Sn)

Element Configuration :

Dual

RoHS Status :

ROHS3 Compliant

Published :

2001

Width :

1.7mm

Drain to Source Voltage (Vdss) :

20V

Transistor Application :

SWITCHING

Turn On Delay Time :

9 ns

Current Rating :

-2.2A

Weight :

36mg

REACH SVHC :

No SVHC

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Number of Terminations :

6

Radiation Hardening :

No