FDC6310P
- Mfr.Part #
- FDC6310P
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- SMALL SIGNAL FIELD-EFFECT TRANSI
- Stock
- 31,507
- In Stock :
- 31,507
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Current Rating :
- -2.2A
- Number of Pins :
- 6
- Number of Elements :
- 2
- Factory Lead Time :
- 10 Weeks
- Width :
- 1.7mm
- Continuous Drain Current (ID) :
- 2.2A
- Element Configuration :
- Dual
- Lead Free :
- Lead Free
- Threshold Voltage :
- -1V
- FET Type :
- 2 P-Channel (Dual)
- Drain to Source Voltage (Vdss) :
- 20V
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Turn-Off Delay Time :
- 10 ns
- Voltage - Rated DC :
- -20V
- Height :
- 1mm
- Power Dissipation :
- 960mW
- Rds On (Max) @ Id, Vgs :
- 125m Ω @ 2.2A, 4.5V
- Drain to Source Breakdown Voltage :
- -20V
- Weight :
- 36mg
- Gate Charge (Qg) (Max) @ Vgs :
- 5.2nC @ 4.5V
- Max Power Dissipation :
- 960mW
- Pbfree Code :
- yes
- Mounting Type :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Length :
- 3mm
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- Resistance :
- 125mOhm
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~150°C TJ
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 12ns
- Terminal Finish :
- Tin (Sn)
- Fall Time (Typ) :
- 12 ns
- FET Feature :
- Logic Level Gate
- Series :
- PowerTrench®
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 337pF @ 10V
- Published :
- 2001
- Number of Terminations :
- 6
- Turn On Delay Time :
- 9 ns
- Gate to Source Voltage (Vgs) :
- 12V
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Power - Max :
- 700mW
- Datasheets
- FDC6310P
FDC6310P Documents
FDC6310P datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDC6310P Description
These P-channel 2.5V MOSFET are manufactured using Fairchild Semiconductor's advanced PowerTrress process, which is customized to minimize on-resistance while maintaining low gate charge for excellent switching performance. These devices are designed to provide excellent power consumption in a very small footprint and are suitable for impractical applications with larger and more expensive SO-8 and TSSOP-8 packages.
FDC6310P Applications
Load switch
Battery protection Power management
FDC6310P Features
-2.2A-20VRosion=125m@Vgs=4.5V
Roson=190m|?@VGs=-2.5V
Low gate charge
?¤Fast switching speed
.High performance trench technology for extremely low ROsiON
.SuperSOTTM-6packagesmall footprint72%
smaller than standard SO-8); low profile(1mm thick)
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