FDC6310P

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rise Time :

12ns

Terminal Finish :

Tin (Sn)

Vgs(th) (Max) @ Id :

1.5V @ 250µA

RoHS Status :

ROHS3 Compliant

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Number of Elements :

2

Turn On Delay Time :

9 ns

Drain to Source Breakdown Voltage :

-20V

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Radiation Hardening :

No

Resistance :

125mOhm

Operating Temperature :

-55°C~150°C TJ

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Turn-Off Delay Time :

10 ns

JESD-609 Code :

e3

Element Configuration :

Dual

Series :

PowerTrench®

FET Type :

2 P-Channel (Dual)

Length :

3mm

Current Rating :

-2.2A

Number of Pins :

6

Drain to Source Voltage (Vdss) :

20V

Terminal Form :

Gull wing

Weight :

36mg

Factory Lead Time :

10 Weeks

Mounting Type :

Surface Mount

Width :

1.7mm

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

125m Ω @ 2.2A, 4.5V

Published :

2001

ECCN Code :

EAR99

Power - Max :

700mW

Height :

1mm

Continuous Drain Current (ID) :

2.2A

Packaging :

Tape and Reel (TR)

FET Feature :

Logic Level Gate

Operating Mode :

ENHANCEMENT MODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate Charge (Qg) (Max) @ Vgs :

5.2nC @ 4.5V

Threshold Voltage :

-1V

Gate to Source Voltage (Vgs) :

12V

Power Dissipation :

960mW

Number of Terminations :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

-20V

Max Power Dissipation :

960mW

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

337pF @ 10V

Fall Time (Typ) :

12 ns

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON