FDC6305N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Fall Time (Typ) :

8.5 ns

Transistor Element Material :

SILICON

FET Feature :

Standard

Drain to Source Breakdown Voltage :

20V

Rise Time :

8.5ns

Max Power Dissipation :

960mW

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

6

Weight :

36mg

Turn-Off Delay Time :

11 ns

Factory Lead Time :

10 Weeks

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Transistor Application :

SWITCHING

Contact Plating :

Tin

Number of Channels :

2

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

2.7A

Input Capacitance (Ciss) (Max) @ Vds :

310pF @ 10V

Lead Free :

Lead Free

ECCN Code :

EAR99

Pbfree Code :

yes

Current Rating :

2.7A

Terminal Form :

Gull wing

Element Configuration :

Dual

Voltage - Rated DC :

20V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Published :

1999

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

5nC @ 4.5V

Packaging :

Tape and Reel (TR)

Max Junction Temperature (Tj) :

150°C

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

No SVHC

Number of Terminations :

6

Height :

1.1mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate to Source Voltage (Vgs) :

8V

Turn On Delay Time :

5 ns

Number of Elements :

2

Width :

1.7mm

Mounting Type :

Surface Mount

Dual Supply Voltage :

20V

Radiation Hardening :

No

Series :

PowerTrench®

Mount :

Surface Mount

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

80m Ω @ 2.7A, 4.5V

Length :

3mm

Resistance :

80mOhm

Power Dissipation :

900mW

FET Type :

2 N-Channel (Dual)

Power - Max :

700mW

Threshold Voltage :

900mV