FDC6304P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Temperature :

-55°C~150°C TJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rise Time :

8ns

Transistor Element Material :

SILICON

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Turn-Off Delay Time :

55 ns

Number of Terminations :

6

Current Rating :

-460mA

Number of Elements :

2

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

25V

Gate to Source Voltage (Vgs) :

8V

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Number of Pins :

6

Rds On (Max) @ Id, Vgs :

1.1 Ω @ 500mA, 4.5V

Lead Free :

Lead Free

REACH SVHC :

No SVHC

Drain to Source Breakdown Voltage :

-25V

Element Configuration :

Dual

Turn On Delay Time :

7 ns

Continuous Drain Current (ID) :

-460mA

Fall Time (Typ) :

8 ns

Resistance :

1.1Ohm

Power Dissipation :

900mW

Factory Lead Time :

10 Weeks

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

-25V

Gate Charge (Qg) (Max) @ Vgs :

1.5nC @ 4.5V

FET Type :

2 P-Channel (Dual)

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

62pF @ 10V

Pbfree Code :

yes

Weight :

36mg

Threshold Voltage :

-860mV

FET Feature :

Logic Level Gate

Max Power Dissipation :

700mW

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

460mA

Package / Case :

SOT-23-6 Thin, TSOT-23-6