FDC6304P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Threshold Voltage :

-860mV

Current Rating :

-460mA

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

FET Feature :

Logic Level Gate

Terminal Finish :

Tin (Sn)

Rise Time :

8ns

FET Type :

2 P-Channel (Dual)

Turn On Delay Time :

7 ns

Continuous Drain Current (ID) :

-460mA

Max Power Dissipation :

700mW

Transistor Application :

SWITCHING

Weight :

36mg

Number of Terminations :

6

Gate Charge (Qg) (Max) @ Vgs :

1.5nC @ 4.5V

Number of Pins :

6

Element Configuration :

Dual

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

62pF @ 10V

Drain to Source Voltage (Vdss) :

25V

Voltage - Rated DC :

-25V

Fall Time (Typ) :

8 ns

Gate to Source Voltage (Vgs) :

8V

Terminal Form :

Gull wing

Radiation Hardening :

No

Number of Elements :

2

Resistance :

1.1Ohm

Current - Continuous Drain (Id) @ 25°C :

460mA

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Power Dissipation :

900mW

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Factory Lead Time :

10 Weeks

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Mount :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

ECCN Code :

EAR99

Turn-Off Delay Time :

55 ns

Drain to Source Breakdown Voltage :

-25V

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

1.1 Ω @ 500mA, 4.5V

Pbfree Code :

yes

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount