FDC6304P

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Turn-Off Delay Time :

55 ns

Input Capacitance (Ciss) (Max) @ Vds :

62pF @ 10V

Threshold Voltage :

-860mV

FET Feature :

Logic Level Gate

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Element Configuration :

Dual

Factory Lead Time :

10 Weeks

Mount :

Surface Mount

Weight :

36mg

Resistance :

1.1Ohm

Number of Terminations :

6

Current - Continuous Drain (Id) @ 25°C :

460mA

Continuous Drain Current (ID) :

-460mA

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

6

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

8 ns

Gate to Source Voltage (Vgs) :

8V

Max Power Dissipation :

700mW

FET Type :

2 P-Channel (Dual)

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

1.5V @ 250µA

REACH SVHC :

No SVHC

Rise Time :

8ns

Terminal Finish :

Tin (Sn)

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Drain to Source Voltage (Vdss) :

25V

Radiation Hardening :

No

Mounting Type :

Surface Mount

Voltage - Rated DC :

-25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

1.1 Ω @ 500mA, 4.5V

Drain to Source Breakdown Voltage :

-25V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Turn On Delay Time :

7 ns

Power Dissipation :

900mW

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Current Rating :

-460mA

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

1.5nC @ 4.5V

RoHS Status :

ROHS3 Compliant

Number of Elements :

2