FDC6303N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate to Source Voltage (Vgs) :

8V

Current Rating :

680mA

Gate Charge (Qg) (Max) @ Vgs :

2.3nC @ 4.5V

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 10V

Number of Elements :

2

Number of Terminations :

6

Element Configuration :

Dual

Termination :

SMD/SMT

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

13 ns

Threshold Voltage :

800mV

Factory Lead Time :

10 Weeks

Additional Feature :

LOGIC LEVEL COMPATIBLE

Width :

1.7mm

Rise Time :

8.5ns

Terminal Finish :

Tin (Sn)

FET Feature :

Logic Level Gate

Pbfree Code :

yes

Continuous Drain Current (ID) :

680mA

Weight :

36mg

Transistor Element Material :

SILICON

Height :

1.1mm

Published :

1997

Max Junction Temperature (Tj) :

150°C

Rds On (Max) @ Id, Vgs :

450m Ω @ 500mA, 4.5V

Resistance :

450mOhm

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Dual Supply Voltage :

25V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Drain to Source Breakdown Voltage :

25V

Number of Pins :

6

Power - Max :

700mW

FET Type :

2 N-Channel (Dual)

ECCN Code :

EAR99

Voltage - Rated DC :

25V

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

17 ns

Lead Free :

Lead Free

Transistor Application :

SWITCHING

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Max Power Dissipation :

900mW

Turn On Delay Time :

3 ns

Operating Temperature :

-55°C~150°C TJ

Number of Channels :

2

Power Dissipation :

900mW

Mounting Type :

Surface Mount

Nominal Vgs :

800 mV

Length :

3mm

Vgs(th) (Max) @ Id :

1.5V @ 250µA