FDC6301N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

8V

Continuous Drain Current (ID) :

220mA

JESD-609 Code :

e3

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Rise Time :

4.5ns

Rds On (Max) @ Id, Vgs :

4 Ω @ 400mA, 4.5V

Resistance :

4Ohm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Termination :

SMD/SMT

Number of Elements :

2

Input Capacitance (Ciss) (Max) @ Vds :

9.5pF @ 10V

Weight :

36mg

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Gate Charge (Qg) (Max) @ Vgs :

0.7nC @ 4.5V

Turn On Delay Time :

5 ns

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Vgs(th) (Max) @ Id :

1.5V @ 250µA

FET Feature :

Logic Level Gate

Element Configuration :

Dual

Radiation Hardening :

No

Transistor Element Material :

SILICON

Height :

1mm

Additional Feature :

LOGIC LEVEL COMPATIBLE

Published :

1997

Factory Lead Time :

10 Weeks

Number of Terminations :

6

Fall Time (Typ) :

4.5 ns

Power Dissipation :

900mW

Nominal Vgs :

850 mV

Threshold Voltage :

850mV

Width :

1.7mm

Power - Max :

700mW

Length :

3mm

Turn-Off Delay Time :

4 ns

Current Rating :

220mA

Voltage - Rated DC :

25V

Contact Plating :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

6

Dual Supply Voltage :

25V

Packaging :

Tape and Reel (TR)

FET Type :

2 N-Channel (Dual)

Max Power Dissipation :

900mW

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

25V