FDB1D7N10CL7

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

100V

Pulsed Drain Current-Max (IDM) :

1390A

Drain to Source Voltage (Vdss) :

100V

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

163nC @ 10V

Avalanche Energy Rating (Eas) :

595 mJ

Power Dissipation-Max :

250W Tc

Surface Mount :

yes

Transistor Application :

SWITCHING

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G6

Operating Temperature :

-55°C~175°C TJ

Turn Off Time-Max (toff) :

194ns

Drain Current-Max (Abs) (ID) :

168A

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Feedback Cap-Max (Crss) :

80 pF

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

1.65m Ω @ 100A, 15V

Current - Continuous Drain (Id) @ 25°C :

268A Tc

JEDEC-95 Code :

TO-263CB

Drain-source On Resistance-Max :

0.00175Ohm

Packaging :

Tape and Reel (TR)

Factory Lead Time :

20 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Turn On Time-Max (ton) :

116ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

6

Drive Voltage (Max Rds On,Min Rds On) :

6V 15V

Vgs (Max) :

±20V

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Package / Case :

TO-263-7, D2Pak (6 Leads + Tab)

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

11600pF @ 50V

RoHS Status :

RoHS Compliant

Terminal Finish :

Tin (Sn)

Series :

PowerTrench®

Vgs(th) (Max) @ Id :

4V @ 700μA

Terminal Position :

Single