FDB16AN08A0

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

9A

Power Dissipation-Max :

135W Tc

Fall Time (Typ) :

30 ns

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

9A Ta 58A Tc

JESD-30 Code :

R-PSSO-G2

Transistor Application :

SWITCHING

Voltage - Rated DC :

75V

Rds On (Max) @ Id, Vgs :

16m Ω @ 58A, 10V

ECCN Code :

EAR99

JESD-609 Code :

e3

Terminal Finish :

Tin (Sn)

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

Series :

PowerTrench®

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Element Material :

SILICON

Number of Elements :

1

Terminal Form :

Gull wing

Weight :

1.31247g

Turn On Delay Time :

8 ns

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Turn-Off Delay Time :

28 ns

Gate to Source Voltage (Vgs) :

20V

Factory Lead Time :

8 Weeks

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

82ns

Published :

2013

Mount :

Surface Mount

Current Rating :

58A

Input Capacitance (Ciss) (Max) @ Vds :

1857pF @ 25V

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Drain to Source Breakdown Voltage :

75V

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Power Dissipation :

135W

Pbfree Code :

yes

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Continuous Drain Current (ID) :

58A

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Element Configuration :

Single

Vgs (Max) :

±20V

FET Type :

N-Channel