DTD123TCT116

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Package / Case :

TO-236-3, SC-59, SOT-23-3

Reach Compliance Code :

not_compliant

Number of Elements :

1

ECCN Code :

EAR99

Published :

2012

Factory Lead Time :

13 Weeks

JESD-30 Code :

R-PDSO-G3

Polarity/Channel Type :

NPN

Packaging :

Tape and Reel (TR)

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 50mA 5V

Transition Frequency :

200MHz

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Resistor - Base (R1) :

2.2 k Ω

Frequency - Transition :

200MHz

Collector Emitter Voltage (VCEO) :

300mV

Max Collector Current :

500mA

Configuration :

SINGLE WITH BUILT-IN RESISTOR

RoHS Status :

ROHS3 Compliant

Transistor Type :

NPN - Pre-Biased

Operating Temperature (Max) :

150°C

Mounting Type :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA

Power - Max :

200mW

VCEsat-Max :

0.3 V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Dual

HTS Code :

8541.21.00.75

Additional Feature :

DIGITAL, BUILT-IN BIAS RESISTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Pin Count :

3

Number of Terminations :

3

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Max Breakdown Voltage :

40V

Collector Emitter Breakdown Voltage :

40V

Current - Collector Cutoff (Max) :

500nA ICBO

Transistor Element Material :

SILICON

Max Power Dissipation :

200mW