DTD114ECHZGT116

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Series :

Automotive, AEC-Q101

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DC Current Gain (hFE) (Min) @ Ic, Vce :

56 @ 50mA 5V

Terminal Position :

Dual

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA

Number of Elements :

1

Current - Collector (Ic) (Max) :

500mA

Factory Lead Time :

13 Weeks

Resistor - Base (R1) :

10 k Ω

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Polarity/Channel Type :

NPN

Power - Max :

200mW

Reach Compliance Code :

not_compliant

Transistor Application :

SWITCHING

Number of Terminations :

3

Transistor Type :

NPN - Pre-Biased + Diode

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Cut Tape (CT)

Transistor Element Material :

SILICON

Published :

2016

Transition Frequency :

200MHz

Resistor - Emitter Base (R2) :

10 k Ω

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1.0

ECCN Code :

EAR99

Terminal Form :

Gull wing

Surface Mount :

yes

Frequency - Transition :

200MHz

JESD-30 Code :

R-PDSO-G3

Collector-Emitter Voltage-Max :

50V

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-236-3, SC-59, SOT-23-3