DTD114EKT146

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Max Output Current :

500mA

Width :

1.6mm

Resistor - Emitter Base (R2) :

10 k Ω

Transistor Type :

NPN - Pre-Biased

Published :

2004

Peak Reflow Temperature (Cel) :

260

Current - Collector Cutoff (Max) :

500nA

Package / Case :

TO-236-3, SC-59, SOT-23-3

Max Power Dissipation :

200mW

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Max Operating Temperature :

150°C

Time@Peak Reflow Temperature-Max (s) :

10

JESD-609 Code :

e1

Terminal Position :

Dual

Resistor - Base (R1) :

10 k Ω

Transistor Application :

SWITCHING

Collector Emitter Voltage (VCEO) :

300mV

Mount :

Surface Mount

Frequency - Transition :

200MHz

REACH SVHC :

No SVHC

Power Dissipation :

200mW

Continuous Collector Current :

500mA

RoHS Status :

ROHS3 Compliant

Length :

2.9mm

Operating Supply Voltage :

50V

Number of Terminations :

3

Polarity :

NPN

Lead Free :

Lead Free

Transition Frequency :

200MHz

Height :

1.1mm

hFE Min :

56

Min Operating Temperature :

-55°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Max Collector Current :

500mA

Voltage - Rated DC :

50V

Radiation Hardening :

No

Mounting Type :

Surface Mount

Current Rating :

500mA

Factory Lead Time :

13 Weeks

ECCN Code :

EAR99

Number of Pins :

3

Base Part Number :

DTD114

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA

Termination :

SMD/SMT

Pin Count :

3

HTS Code :

8541.21.00.75

Terminal Form :

Gull wing

DC Current Gain (hFE) (Min) @ Ic, Vce :

56 @ 50mA 5V

Max Breakdown Voltage :

50V

Number of Elements :

1

Collector Emitter Breakdown Voltage :

50V