DTD114GKT146

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

HTS Code :

8541.21.00.75

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power Dissipation :

200mW

JESD-609 Code :

e1

Pin Count :

3

Frequency - Transition :

200MHz

Number of Elements :

1

Radiation Hardening :

No

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA

Voltage - Rated DC :

50V

Additional Feature :

BUILT-IN BIAS RESISTOR

Base Part Number :

DTD114

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

Collector Emitter Voltage (VCEO) :

50V

Pbfree Code :

yes

Transistor Application :

SWITCHING

Max Breakdown Voltage :

50V

Collector Emitter Breakdown Voltage :

50V

Terminal Form :

Gull wing

DC Current Gain (hFE) (Min) @ Ic, Vce :

56 @ 50mA 5V

Current Rating :

500mA

Published :

2004

Element Configuration :

Single

Transition Frequency :

200MHz

Continuous Collector Current :

500mA

hFE Min :

56

ECCN Code :

EAR99

Transistor Type :

NPN - Pre-Biased

Mount :

Surface Mount

Mounting Type :

Surface Mount

Max Collector Current :

500mA

Max Operating Temperature :

150°C

Lead Free :

Lead Free

Max Power Dissipation :

200mW

Emitter Base Voltage (VEBO) :

5V

Factory Lead Time :

13 Weeks

Polarity :

NPN

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Number of Pins :

3

Resistor - Emitter Base (R2) :

10 k Ω

Current - Collector Cutoff (Max) :

500nA ICBO

Time@Peak Reflow Temperature-Max (s) :

10

Min Operating Temperature :

-55°C