DTD114GKT146

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Transistor Type :

NPN - Pre-Biased

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Form :

Gull wing

Min Operating Temperature :

-55°C

Collector Emitter Breakdown Voltage :

50V

Transistor Application :

SWITCHING

DC Current Gain (hFE) (Min) @ Ic, Vce :

56 @ 50mA 5V

Emitter Base Voltage (VEBO) :

5V

HTS Code :

8541.21.00.75

hFE Min :

56

Current - Collector Cutoff (Max) :

500nA ICBO

Base Part Number :

DTD114

Terminal Position :

Dual

Number of Pins :

3

Continuous Collector Current :

500mA

Pbfree Code :

yes

Mounting Type :

Surface Mount

Frequency - Transition :

200MHz

Published :

2004

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Collector Emitter Voltage (VCEO) :

50V

Pin Count :

3

Max Power Dissipation :

200mW

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Breakdown Voltage :

50V

Transition Frequency :

200MHz

Resistor - Emitter Base (R2) :

10 k Ω

Factory Lead Time :

13 Weeks

Max Collector Current :

500mA

Additional Feature :

BUILT-IN BIAS RESISTOR

Mount :

Surface Mount

Polarity :

NPN

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA

Current Rating :

500mA

JESD-609 Code :

e1

Lead Free :

Lead Free

Max Operating Temperature :

150°C

Voltage - Rated DC :

50V

Time@Peak Reflow Temperature-Max (s) :

10

Number of Elements :

1

Number of Terminations :

3

Power Dissipation :

200mW