DTD114GKT146

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Max Collector Current :

500mA

Peak Reflow Temperature (Cel) :

260

Voltage - Rated DC :

50V

Terminal Position :

Dual

Number of Terminations :

3

Radiation Hardening :

No

Frequency - Transition :

200MHz

Max Power Dissipation :

200mW

Max Operating Temperature :

150°C

Min Operating Temperature :

-55°C

Collector Emitter Voltage (VCEO) :

50V

Transistor Type :

NPN - Pre-Biased

Current - Collector Cutoff (Max) :

500nA ICBO

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Factory Lead Time :

13 Weeks

Resistor - Emitter Base (R2) :

10 k Ω

Mounting Type :

Surface Mount

Transition Frequency :

200MHz

Mount :

Surface Mount

Terminal Form :

Gull wing

DC Current Gain (hFE) (Min) @ Ic, Vce :

56 @ 50mA 5V

Transistor Application :

SWITCHING

Current Rating :

500mA

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

10

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

hFE Min :

56

Continuous Collector Current :

500mA

Published :

2004

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

50V

Emitter Base Voltage (VEBO) :

5V

Power Dissipation :

200mW

Number of Pins :

3

Additional Feature :

BUILT-IN BIAS RESISTOR

Polarity :

NPN

Base Part Number :

DTD114

HTS Code :

8541.21.00.75

Pbfree Code :

yes

Max Breakdown Voltage :

50V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Number of Elements :

1

JESD-609 Code :

e1

Element Configuration :

Single