DTD113ZUT106

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

hFE Min :

82

Voltage - Rated DC :

50V

Collector Emitter Breakdown Voltage :

50V

ECCN Code :

EAR99

Radiation Hardening :

No

Current Rating :

500mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Min Operating Temperature :

-55°C

Mount :

Surface Mount

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Transistor Type :

NPN - Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA

Peak Reflow Temperature (Cel) :

260

Current - Collector Cutoff (Max) :

500nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

82 @ 50mA 5V

Time@Peak Reflow Temperature-Max (s) :

10

Polarity :

NPN

Published :

1998

Resistor - Emitter Base (R2) :

10 k Ω

Pbfree Code :

yes

Base Part Number :

DTD113

Resistor - Base (R1) :

1 k Ω

Pin Count :

3

HTS Code :

8541.21.00.75

Frequency - Transition :

200MHz

JESD-609 Code :

e1

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 10

Number of Elements :

1

Power Dissipation :

200mW

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Collector Emitter Voltage (VCEO) :

300mV

Element Configuration :

Single

Number of Pins :

3

Number of Terminations :

3

Lead Free :

Lead Free

Max Operating Temperature :

150°C

Max Collector Current :

500mA

RoHS Status :

ROHS3 Compliant

Package / Case :

SC-70, SOT-323

Mounting Type :

Surface Mount

Max Breakdown Voltage :

50V

REACH SVHC :

No SVHC

Max Power Dissipation :

200mW

Factory Lead Time :

13 Weeks

Transition Frequency :

200MHz