DMN63D8LDW-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Width :

1.35mm

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Package / Case :

6-TSSOP, SC-88, SOT-363

Factory Lead Time :

15 Weeks

Additional Feature :

High Reliability

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

22pF @ 25V

Max Power Dissipation :

300mW

Continuous Drain Current (ID) :

220mA

Drain to Source Breakdown Voltage :

30V

Number of Pins :

6

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Drain-source On Resistance-Max :

4.5Ohm

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Radiation Hardening :

No

Base Part Number :

DMN63D8L

Max Junction Temperature (Tj) :

150°C

FET Feature :

Logic Level Gate

Number of Terminations :

6

Mount :

Surface Mount

Reference Standard :

AEC-Q101

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Contact Plating :

Tin

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

12 ns

Drain to Source Voltage (Vdss) :

30V

Terminal Form :

Gull wing

Turn On Delay Time :

3.3 ns

Length :

2.2mm

Rds On (Max) @ Id, Vgs :

2.8 Ω @ 250mA, 10V

Height :

1.1mm

Number of Elements :

2

Time@Peak Reflow Temperature-Max (s) :

40

Pbfree Code :

yes

Power Dissipation :

300mW

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

6.3 ns

Transistor Application :

SWITCHING

Element Configuration :

Dual

Threshold Voltage :

1.5V

Gate Charge (Qg) (Max) @ Vgs :

870nC @ 10V

FET Type :

2 N-Channel (Dual)

Rise Time :

3.2ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS Status :

ROHS3 Compliant

Published :

2012

Weight :

6.010099mg

Gate to Source Voltage (Vgs) :

20V