DMN6013LFG-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

11.7 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

Matte Tin (Sn)

Turn On Delay Time :

6.2 ns

FET Type :

N-Channel

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Package / Case :

8-PowerVDFN

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mount :

Surface Mount

Case Connection :

DRAIN

Terminal Position :

Dual

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Number of Channels :

1

Vgs(th) (Max) @ Id :

3V @ 250µA

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

27.6 ns

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

55.4nC @ 10V

ECCN Code :

EAR99

Number of Pins :

8

Rds On (Max) @ Id, Vgs :

13m Ω @ 10A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

10.3A Ta 45A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

5

Terminal Form :

NO LEAD

RoHS Status :

ROHS3 Compliant

Published :

2014

JESD-30 Code :

S-PDSO-N5

Factory Lead Time :

23 Weeks

Continuous Drain Current (ID) :

45A

Element Configuration :

Single

Power Dissipation-Max :

1W Ta

Weight :

72.007789mg

DS Breakdown Voltage-Min :

60V

JESD-609 Code :

e3

Rise Time :

9.9ns

Input Capacitance (Ciss) (Max) @ Vds :

2577pF @ 30V

Drain to Source Voltage (Vdss) :

60V