DMN6013LFG-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

8-PowerVDFN

Rise Time :

9.9ns

Drain to Source Voltage (Vdss) :

60V

Number of Channels :

1

Fall Time (Typ) :

11.7 ns

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

13m Ω @ 10A, 10V

Number of Elements :

1

Number of Terminations :

5

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

10.3A Ta 45A Tc

Continuous Drain Current (ID) :

45A

Gate Charge (Qg) (Max) @ Vgs :

55.4nC @ 10V

Terminal Finish :

Matte Tin (Sn)

Vgs (Max) :

±20V

JESD-609 Code :

e3

Power Dissipation-Max :

1W Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2014

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Factory Lead Time :

23 Weeks

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

27.6 ns

DS Breakdown Voltage-Min :

60V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Turn On Delay Time :

6.2 ns

Case Connection :

DRAIN

Number of Pins :

8

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Weight :

72.007789mg

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs(th) (Max) @ Id :

3V @ 250µA

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

2577pF @ 30V

Terminal Form :

NO LEAD

JESD-30 Code :

S-PDSO-N5