DMN6013LFG-7
- Mfr.Part #
- DMN6013LFG-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- 8-PowerVDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 10.3A PWRDI3333
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Operating Mode :
- ENHANCEMENT MODE
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tape and Reel (TR)
- Fall Time (Typ) :
- 11.7 ns
- Number of Terminations :
- 5
- Element Configuration :
- Single
- JESD-30 Code :
- S-PDSO-N5
- Mount :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 20V
- Package / Case :
- 8-PowerVDFN
- Number of Elements :
- 1
- Turn On Delay Time :
- 6.2 ns
- Current - Continuous Drain (Id) @ 25°C :
- 10.3A Ta 45A Tc
- Drain to Source Voltage (Vdss) :
- 60V
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Channels :
- 1
- Weight :
- 72.007789mg
- Continuous Drain Current (ID) :
- 45A
- FET Type :
- N-Channel
- Transistor Application :
- SWITCHING
- Number of Pins :
- 8
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Terminal Form :
- NO LEAD
- Factory Lead Time :
- 23 Weeks
- Terminal Finish :
- Matte Tin (Sn)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 1W Ta
- Input Capacitance (Ciss) (Max) @ Vds :
- 2577pF @ 30V
- Gate Charge (Qg) (Max) @ Vgs :
- 55.4nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Vgs (Max) :
- ±20V
- Case Connection :
- DRAIN
- Published :
- 2014
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 9.9ns
- Rds On (Max) @ Id, Vgs :
- 13m Ω @ 10A, 10V
- DS Breakdown Voltage-Min :
- 60V
- Turn-Off Delay Time :
- 27.6 ns
- Datasheets
- DMN6013LFG-7
DMN6013LFG-7 Documents

N-Channel Tape & Reel (TR) 13m Ω @ 10A, 10V ±20V 2577pF @ 30V 55.4nC @ 10V 60V 8-PowerVDFN
DMN6013LFG-7 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2577pF @ 30V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 45A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 27.6 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 6.2 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 60V.For this transistor to work, a voltage 60V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
DMN6013LFG-7 Features
a continuous drain current (ID) of 45A
the turn-off delay time is 27.6 ns
a 60V drain to source voltage (Vdss)
DMN6013LFG-7 Applications
There are a lot of Diodes Incorporated
DMN6013LFG-7 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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