DMN6013LFG-7

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Mfr.Part #
DMN6013LFG-7
Manufacturer
Diodes Incorporated
Package / Case
8-PowerVDFN
Datasheet
Download
Description
MOSFET N-CH 60V 10.3A PWRDI3333
Stock
1
In Stock :
1

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - FETs, MOSFETs - Single
Mounting Type :
Surface Mount
ECCN Code :
EAR99
Operating Mode :
ENHANCEMENT MODE
JESD-609 Code :
e3
Operating Temperature :
-55°C~150°C TJ
Packaging :
Tape and Reel (TR)
Fall Time (Typ) :
11.7 ns
Number of Terminations :
5
Element Configuration :
Single
JESD-30 Code :
S-PDSO-N5
Mount :
Surface Mount
Gate to Source Voltage (Vgs) :
20V
Package / Case :
8-PowerVDFN
Number of Elements :
1
Turn On Delay Time :
6.2 ns
Current - Continuous Drain (Id) @ 25°C :
10.3A Ta 45A Tc
Drain to Source Voltage (Vdss) :
60V
Terminal Position :
Dual
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Channels :
1
Weight :
72.007789mg
Continuous Drain Current (ID) :
45A
FET Type :
N-Channel
Transistor Application :
SWITCHING
Number of Pins :
8
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Transistor Element Material :
SILICON
Terminal Form :
NO LEAD
Factory Lead Time :
23 Weeks
Terminal Finish :
Matte Tin (Sn)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Power Dissipation-Max :
1W Ta
Input Capacitance (Ciss) (Max) @ Vds :
2577pF @ 30V
Gate Charge (Qg) (Max) @ Vgs :
55.4nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Vgs (Max) :
±20V
Case Connection :
DRAIN
Published :
2014
Vgs(th) (Max) @ Id :
3V @ 250µA
RoHS Status :
ROHS3 Compliant
Rise Time :
9.9ns
Rds On (Max) @ Id, Vgs :
13m Ω @ 10A, 10V
DS Breakdown Voltage-Min :
60V
Turn-Off Delay Time :
27.6 ns
Introducing Transistors - FETs, MOSFETs - Single Diodes Incorporated DMN6013LFG-7 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Terminations:5, Package / Case:8-PowerVDFN, Number of Channels:1, Number of Pins:8, DMN6013LFG-7 pinout, DMN6013LFG-7 datasheet PDF, DMN6013LFG-7 amp .Beyond Transistors - FETs, MOSFETs - Single Diodes Incorporated DMN6013LFG-7 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated DMN6013LFG-7


N-Channel Tape & Reel (TR) 13m Ω @ 10A, 10V ±20V 2577pF @ 30V 55.4nC @ 10V 60V 8-PowerVDFN

DMN6013LFG-7 Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2577pF @ 30V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 45A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 27.6 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 6.2 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 60V.For this transistor to work, a voltage 60V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.

DMN6013LFG-7 Features


a continuous drain current (ID) of 45A
the turn-off delay time is 27.6 ns
a 60V drain to source voltage (Vdss)


DMN6013LFG-7 Applications


There are a lot of Diodes Incorporated
DMN6013LFG-7 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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