DMN601TK-7
- Mfr.Part #
- DMN601TK-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-523
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 300MA SOT-523
- Stock
- 32,201
- In Stock :
- 32,201
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain-source On Resistance-Max :
- 2Ohm
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Factory Lead Time :
- 14 Weeks
- Input Capacitance (Ciss) (Max) @ Vds :
- 50pF @ 25V
- Current - Continuous Drain (Id) @ 25°C :
- 300mA Ta
- Current Rating :
- 300mA
- REACH SVHC :
- No SVHC
- Pbfree Code :
- yes
- Power Dissipation-Max :
- 150mW Ta
- Voltage - Rated DC :
- 60V
- Feedback Cap-Max (Crss) :
- 5 pF
- Terminal Form :
- Gull wing
- Length :
- 1.6mm
- FET Type :
- N-Channel
- Published :
- 2009
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Peak Reflow Temperature (Cel) :
- 260
- Continuous Drain Current (ID) :
- 300mA
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Drain to Source Breakdown Voltage :
- 60V
- Package / Case :
- SOT-523
- Rds On (Max) @ Id, Vgs :
- 2 Ω @ 500mA, 10V
- Operating Temperature :
- -65°C~150°C TJ
- Number of Pins :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Transistor Application :
- SWITCHING
- Number of Channels :
- 1
- Element Configuration :
- Single
- Height :
- 750μm
- Power Dissipation :
- 150mW
- Radiation Hardening :
- No
- Terminal Finish :
- Matte Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Mount :
- Surface Mount
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Additional Feature :
- LOW CAPACITANCE
- Packaging :
- Tape and Reel (TR)
- Operating Mode :
- ENHANCEMENT MODE
- Weight :
- 2.012816mg
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Elements :
- 1
- Width :
- 800μm
- Vgs(th) (Max) @ Id :
- 2.5V @ 1mA
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Vgs (Max) :
- ±20V
- Datasheets
- DMN601TK-7

N-Channel Tape & Reel (TR) 2 Ω @ 500mA, 10V ±20V 50pF @ 25V SOT-523
DMN601TK-7 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 50pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 300mA. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=60V. And this device has 60V drain to source breakdown voltage.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (5V 10V), this device helps reduce its overall power consumption.
DMN601TK-7 Features
a continuous drain current (ID) of 300mA
a drain-to-source breakdown voltage of 60V voltage
DMN601TK-7 Applications
There are a lot of Diodes Incorporated
DMN601TK-7 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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