DMN601TK-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Power Dissipation :

150mW

Time@Peak Reflow Temperature-Max (s) :

40

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Feedback Cap-Max (Crss) :

5 pF

Drain-source On Resistance-Max :

2Ohm

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

20V

Length :

1.6mm

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-65°C~150°C TJ

Power Dissipation-Max :

150mW Ta

Height :

750μm

Terminal Position :

Dual

Current Rating :

300mA

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 25V

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Single

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Terminal Finish :

Matte Tin (Sn)

Additional Feature :

LOW CAPACITANCE

Pbfree Code :

yes

JESD-609 Code :

e3

Pin Count :

3

Width :

800μm

Rds On (Max) @ Id, Vgs :

2 Ω @ 500mA, 10V

Drain to Source Breakdown Voltage :

60V

Package / Case :

SOT-523

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Voltage - Rated DC :

60V

Weight :

2.012816mg

Number of Channels :

1

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

300mA Ta

Published :

2009

Continuous Drain Current (ID) :

300mA

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Number of Pins :

3

Number of Elements :

1

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Factory Lead Time :

14 Weeks

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE