DMN601DMK-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 25V

Element Configuration :

Dual

REACH SVHC :

No SVHC

Additional Feature :

LOW CAPACITANCE

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Length :

3mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

6

Rds On (Max) @ Id, Vgs :

2.4 Ω @ 200mA, 10V

ECCN Code :

EAR99

Mounting Type :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Rise Time :

3.4ns

Terminal Finish :

Matte Tin (Sn)

Published :

2017

Time@Peak Reflow Temperature-Max (s) :

40

Feedback Cap-Max (Crss) :

5 pF

Drain to Source Breakdown Voltage :

60V

Fall Time (Typ) :

9.9 ns

Drain-source On Resistance-Max :

4Ohm

Gate to Source Voltage (Vgs) :

20V

FET Feature :

Logic Level Gate

Voltage - Rated DC :

60V

Number of Terminations :

6

Turn-Off Delay Time :

15.7 ns

FET Type :

2 N-Channel (Dual)

Width :

1.6mm

Current Rating :

305mA

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

510mA

Package / Case :

SOT-23-6

Number of Pins :

6

Lead Free :

Lead Free

Terminal Form :

Gull wing

Drain Current-Max (Abs) (ID) :

0.305A

Height :

1.1mm

Base Part Number :

DMN601DMK

Radiation Hardening :

No

Max Power Dissipation :

700mW

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Number of Elements :

2

Pbfree Code :

yes

Power Dissipation :

980mW

Turn On Delay Time :

3.9 ns

Transistor Element Material :

SILICON

Factory Lead Time :

16 Weeks

Gate Charge (Qg) (Max) @ Vgs :

304nC @ 4.5V

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2.5V @ 1mA