DMN601VK-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Drain to Source Breakdown Voltage :

60V

Transistor Element Material :

SILICON

Resistance :

2Ohm

Base Part Number :

DMN601VK

Terminal Finish :

Matte Tin (Sn)

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Width :

1.2mm

Rds On (Max) @ Id, Vgs :

2 Ω @ 500mA, 10V

REACH SVHC :

No SVHC

Feedback Cap-Max (Crss) :

5 pF

RoHS Status :

ROHS3 Compliant

Number of Terminations :

6

Number of Elements :

2

Power Dissipation :

250mW

Element Configuration :

Dual

Lead Free :

Lead Free

FET Feature :

Logic Level Gate

JESD-609 Code :

e3

Published :

2007

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

0.305A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature :

-65°C~150°C TJ

Voltage - Rated DC :

60V

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Max Power Dissipation :

250mW

Terminal Form :

Flat

Additional Feature :

LOW CAPACITANCE

Height :

600μm

Pin Count :

6

Time@Peak Reflow Temperature-Max (s) :

40

Number of Pins :

6

Package / Case :

SOT-563, SOT-666

FET Type :

2 N-Channel (Dual)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

3.005049mg

Length :

1.6mm

Current Rating :

305mA

Factory Lead Time :

16 Weeks

Continuous Drain Current (ID) :

305mA

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 25V