DMN601VK-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Pins :

6

Power Dissipation :

250mW

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 25V

FET Feature :

Logic Level Gate

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

60V

Additional Feature :

LOW CAPACITANCE

Length :

1.6mm

Pbfree Code :

yes

ECCN Code :

EAR99

Lead Free :

Lead Free

Terminal Finish :

Matte Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

40

Weight :

3.005049mg

Continuous Drain Current (ID) :

305mA

Number of Terminations :

6

FET Type :

2 N-Channel (Dual)

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

2

Element Configuration :

Dual

Base Part Number :

DMN601VK

Height :

600μm

Factory Lead Time :

16 Weeks

Voltage - Rated DC :

60V

Mount :

Surface Mount

Drain Current-Max (Abs) (ID) :

0.305A

Radiation Hardening :

No

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Terminal Form :

Flat

Package / Case :

SOT-563, SOT-666

Operating Temperature :

-65°C~150°C TJ

Published :

2007

Width :

1.2mm

Peak Reflow Temperature (Cel) :

260

Max Power Dissipation :

250mW

Transistor Element Material :

SILICON

Feedback Cap-Max (Crss) :

5 pF

Pin Count :

6

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Resistance :

2Ohm

Current Rating :

305mA

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

2 Ω @ 500mA, 10V