DMN601DWK-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pbfree Code :

yes

Factory Lead Time :

16 Weeks

Mounting Type :

Surface Mount

Published :

2007

Length :

2.2mm

Max Power Dissipation :

200mW

FET Type :

2 N-Channel (Dual)

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 25V

Resistance :

2Ohm

Termination :

SMD/SMT

Packaging :

Tape and Reel (TR)

Nominal Vgs :

1.6 V

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

LOW CAPACITANCE

Number of Terminations :

6

FET Feature :

Logic Level Gate

Package / Case :

6-TSSOP, SC-88, SOT-363

RoHS Status :

ROHS3 Compliant

Height :

1mm

Continuous Drain Current (ID) :

305mA

Drain to Source Breakdown Voltage :

60V

Pin Count :

6

Operating Temperature :

-65°C~150°C TJ

Number of Channels :

2

Time@Peak Reflow Temperature-Max (s) :

40

Width :

1.35mm

Element Configuration :

Dual

JESD-609 Code :

e3

Number of Pins :

6

Mount :

Surface Mount

Feedback Cap-Max (Crss) :

5 pF

Base Part Number :

DMN601DWK

Dual Supply Voltage :

60V

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

REACH SVHC :

No SVHC

Threshold Voltage :

1.6V

Lead Free :

Lead Free

Contact Plating :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

2

Power Dissipation :

200mW

Drain Current-Max (Abs) (ID) :

0.305A

Weight :

6.010099mg

Current Rating :

305mA

Reference Standard :

AEC-Q101

Terminal Form :

Gull wing

Voltage - Rated DC :

60V

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

2 Ω @ 500mA, 10V

ECCN Code :

EAR99