DMN601DWK-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Package / Case :

6-TSSOP, SC-88, SOT-363

Resistance :

2Ohm

Pin Count :

6

Current Rating :

305mA

Width :

1.35mm

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

2.5V @ 1mA

JESD-609 Code :

e3

Max Power Dissipation :

200mW

Voltage - Rated DC :

60V

Mount :

Surface Mount

Transistor Application :

SWITCHING

FET Type :

2 N-Channel (Dual)

Contact Plating :

Tin

Nominal Vgs :

1.6 V

FET Feature :

Logic Level Gate

Base Part Number :

DMN601DWK

REACH SVHC :

No SVHC

Height :

1mm

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 25V

Packaging :

Tape and Reel (TR)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pbfree Code :

yes

Threshold Voltage :

1.6V

ECCN Code :

EAR99

Feedback Cap-Max (Crss) :

5 pF

Number of Terminations :

6

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

60V

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

2

Factory Lead Time :

16 Weeks

Number of Channels :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Termination :

SMD/SMT

Operating Temperature :

-65°C~150°C TJ

Continuous Drain Current (ID) :

305mA

Reference Standard :

AEC-Q101

Dual Supply Voltage :

60V

Weight :

6.010099mg

Additional Feature :

LOW CAPACITANCE

Published :

2007

Radiation Hardening :

No

Drain Current-Max (Abs) (ID) :

0.305A

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

2 Ω @ 500mA, 10V

Power Dissipation :

200mW

Element Configuration :

Dual

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

40

Length :

2.2mm

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

6