DMN601DWK-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Application :

SWITCHING

Contact Plating :

Tin

JESD-609 Code :

e3

Voltage - Rated DC :

60V

Mounting Type :

Surface Mount

Element Configuration :

Dual

Resistance :

2Ohm

Rds On (Max) @ Id, Vgs :

2 Ω @ 500mA, 10V

Number of Channels :

2

Peak Reflow Temperature (Cel) :

260

Threshold Voltage :

1.6V

Current Rating :

305mA

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Height :

1mm

Number of Pins :

6

Nominal Vgs :

1.6 V

FET Feature :

Logic Level Gate

Termination :

SMD/SMT

Weight :

6.010099mg

Number of Terminations :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

6-TSSOP, SC-88, SOT-363

Additional Feature :

LOW CAPACITANCE

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

305mA

Input Capacitance (Ciss) (Max) @ Vds :

50pF @ 25V

Terminal Form :

Gull wing

Power Dissipation :

200mW

Dual Supply Voltage :

60V

Operating Temperature :

-65°C~150°C TJ

Feedback Cap-Max (Crss) :

5 pF

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

6

Published :

2007

REACH SVHC :

No SVHC

Drain to Source Breakdown Voltage :

60V

Operating Mode :

ENHANCEMENT MODE

Base Part Number :

DMN601DWK

Radiation Hardening :

No

Pbfree Code :

yes

FET Type :

2 N-Channel (Dual)

Length :

2.2mm

Factory Lead Time :

16 Weeks

Drain Current-Max (Abs) (ID) :

0.305A

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Number of Elements :

2

Width :

1.35mm

RoHS Status :

ROHS3 Compliant

Reference Standard :

AEC-Q101

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Max Power Dissipation :

200mW

Lead Free :

Lead Free