DMN2990UFA-7B
- Mfr.Part #
- DMN2990UFA-7B
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 510MA 3DFN
- Stock
- 7,523
- In Stock :
- 7,523
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 3.3ns
- Published :
- 2013
- REACH SVHC :
- No SVHC
- Width :
- 850μm
- Lead Free :
- Lead Free
- Drain to Source Breakdown Voltage :
- 20V
- Terminal Position :
- Dual
- JESD-609 Code :
- e4
- Element Configuration :
- Single
- Drain-source On Resistance-Max :
- 0.99Ohm
- Length :
- 650μm
- Mounting Type :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 27.6pF @ 16V
- Height :
- 350μm
- Transistor Application :
- SWITCHING
- Continuous Drain Current (ID) :
- 510mA
- Peak Reflow Temperature (Cel) :
- 260
- Gate Charge (Qg) (Max) @ Vgs :
- 0.5nC @ 4.5V
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Package / Case :
- 3-XFDFN
- Turn-Off Delay Time :
- 19 ns
- FET Type :
- N-Channel
- ECCN Code :
- EAR99
- Factory Lead Time :
- 15 Weeks
- Feedback Cap-Max (Crss) :
- 5.6 pF
- Current - Continuous Drain (Id) @ 25°C :
- 510mA Ta
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±8V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Operating Temperature :
- -55°C~150°C TJ
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Fall Time (Typ) :
- 6.4 ns
- Case Connection :
- DRAIN
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Turn On Delay Time :
- 4 ns
- Gate to Source Voltage (Vgs) :
- 8V
- Additional Feature :
- High Reliability
- Rds On (Max) @ Id, Vgs :
- 990m Ω @ 100mA, 4.5V
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- Number of Channels :
- 1
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.2V 4.5V
- Power Dissipation-Max :
- 400mW Ta
- Packaging :
- Cut Tape (CT)
- Terminal Form :
- NO LEAD
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Datasheets
- DMN2990UFA-7B

N-Channel Cut Tape (CT) 990m Ω @ 100mA, 4.5V ±8V 27.6pF @ 16V 0.5nC @ 4.5V 3-XFDFN
DMN2990UFA-7B Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 27.6pF @ 16V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 510mA amps.In this device, the drain-source breakdown voltage is 20V and VGS=20V, so the drain-source breakdown voltage is 20V in this case.It is [19 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 4 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 8V.A device like this reduces its overall power consumption when it uses drive voltage (1.2V 4.5V).
DMN2990UFA-7B Features
a continuous drain current (ID) of 510mA
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 19 ns
DMN2990UFA-7B Applications
There are a lot of Diodes Incorporated
DMN2990UFA-7B applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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