DMN2990UFA-7B

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2013

Turn On Delay Time :

4 ns

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

510mA

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

1V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Terminal Position :

Dual

Turn-Off Delay Time :

19 ns

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

8V

Fall Time (Typ) :

6.4 ns

Gate Charge (Qg) (Max) @ Vgs :

0.5nC @ 4.5V

Number of Elements :

1

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Number of Channels :

1

Power Dissipation-Max :

400mW Ta

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Input Capacitance (Ciss) (Max) @ Vds :

27.6pF @ 16V

Feedback Cap-Max (Crss) :

5.6 pF

Rds On (Max) @ Id, Vgs :

990m Ω @ 100mA, 4.5V

FET Type :

N-Channel

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Width :

850μm

Terminal Form :

NO LEAD

Current - Continuous Drain (Id) @ 25°C :

510mA Ta

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.99Ohm

Length :

650μm

JESD-609 Code :

e4

Number of Terminations :

3

ECCN Code :

EAR99

Additional Feature :

High Reliability

Rise Time :

3.3ns

Drain to Source Breakdown Voltage :

20V

Time@Peak Reflow Temperature-Max (s) :

40

Element Configuration :

Single

Factory Lead Time :

15 Weeks

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

1.2V 4.5V

Height :

350μm

Package / Case :

3-XFDFN

Packaging :

Cut Tape (CT)

Vgs (Max) :

±8V