DMN26D0UT-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

230mA

Transistor Element Material :

SILICON

Turn-Off Delay Time :

13.4 ns

Turn On Delay Time :

3.8 ns

Pin Count :

3

Gate to Source Voltage (Vgs) :

10V

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

REACH SVHC :

No SVHC

Number of Channels :

1

Height :

900μm

Package / Case :

SOT-523

Drain to Source Breakdown Voltage :

20V

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

14.1pF @ 15V

Power Dissipation :

300mW

Radiation Hardening :

No

Power Dissipation-Max :

300mW Ta

RoHS Status :

ROHS3 Compliant

Weight :

2.012816mg

Terminal Finish :

Matte Tin (Sn)

Additional Feature :

High Reliability

Published :

2009

Factory Lead Time :

14 Weeks

Rise Time :

7.9ns

Element Configuration :

Single

ECCN Code :

EAR99

Max Junction Temperature (Tj) :

150°C

Terminal Position :

Dual

Fall Time (Typ) :

15.2 ns

Rds On (Max) @ Id, Vgs :

3 Ω @ 100mA, 4.5V

Pbfree Code :

yes

Width :

850μm

Packaging :

Cut Tape (CT)

Time@Peak Reflow Temperature-Max (s) :

40

Current - Continuous Drain (Id) @ 25°C :

230mA Ta

Vgs (Max) :

±10V

Length :

1.7mm

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

1V @ 250μA

Resistance :

3Ohm

Threshold Voltage :

1V

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

1.2V 4.5V

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

FET Type :

N-Channel