DMN26D0UFB4-7B

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Package Type :

X2-DFN1006-3

Current - Continuous Drain (Id) @ 25°C :

240mA (Ta)

ECCN Code :

EAR99

Series :

-

Product Status :

Obsolete

Power Dissipation-Max (Abs) :

0.35 W

Peak Reflow Temperature (Cel) :

260

Product Type :

MOSFET

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Drain-source On Resistance-Max :

3 Ω

Manufacturer :

Diodes Incorporated

DS Breakdown Voltage-Min :

20 V

Channel Type :

N

Technology :

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) :

20 V

Reach Compliance Code :

Compliant

Polarity/Channel Type :

N-Channel

Pin Count :

3

Transistor Application :

SWITCHING

Product Category :

MOSFET

Case Connection :

DRAIN

Transistor Element Material :

SILICON

JESD-30 Code :

R-PBCC-N3

Terminal Position :

BOTTOM

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Additional Feature :

ESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLD

Rds On (Max) @ Id, Vgs :

3Ohm @ 100mA, 4.5V

FET Type :

N-Channel

Terminal Form :

NO LEAD

Operating Temperature :

-55°C ~ 150°C (TJ)

Brand :

Diodes Incorporated

FET Feature :

-

Supplier Device Package :

X2-DFN1006-3

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

14.1 pF @ 15 V

Subcategory :

MOSFETs

Vgs(th) (Max) @ Id :

900mV @ 250μA

Drive Voltage (Max Rds On, Min Rds On) :

1.5V, 4.5V

Number of Terminals :

3

Vgs (Max) :

±10V

JESD-609 Code :

e4

Drain Current-Max (Abs) (ID) :

0.24 A

Power Dissipation (Max) :

350mW (Ta)

Package :

Bulk

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package / Case :

3-XFDFN

Surface Mount :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

Package Shape :

RECTANGULAR