DMN26D0UDJ-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Input Capacitance (Ciss) (Max) @ Vds :

14.1pF @ 15V

Transistor Application :

SWITCHING

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mount :

Surface Mount

REACH SVHC :

No SVHC

Package / Case :

SOT-963

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Flat

Rise Time :

7.9ns

Packaging :

Cut Tape (CT)

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

3 Ω @ 100mA, 4.5V

Pin Count :

6

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Length :

1.05mm

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Height :

450μm

Number of Terminations :

6

Continuous Drain Current (ID) :

240mA

Power Dissipation :

300mW

Gate to Source Voltage (Vgs) :

10V

Max Power Dissipation :

300mW

Time@Peak Reflow Temperature-Max (s) :

40

Published :

2011

Number of Pins :

6

FET Feature :

Logic Level Gate

Terminal Finish :

Matte Tin (Sn)

Radiation Hardening :

No

Turn-Off Delay Time :

13.4 ns

Base Part Number :

DMN26D0UDJ

Drain to Source Voltage (Vdss) :

20V

Number of Elements :

2

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

1.05V @ 250μA

Additional Feature :

ESD Protection

Mounting Type :

Surface Mount

Fall Time (Typ) :

15.2 ns

Width :

850μm

Factory Lead Time :

15 Weeks

Turn On Delay Time :

3.8 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Drain-source On Resistance-Max :

3Ohm

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

0.18A

FET Type :

2 N-Channel (Dual)