DMN2600UFB-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

540mW Ta

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

25V

Factory Lead Time :

17 Weeks

Rds On (Max) @ Id, Vgs :

350m Ω @ 200mA, 4.5V

JESD-609 Code :

e4

Published :

2011

FET Type :

N-Channel

Continuous Drain Current (ID) :

1.3A

Gate to Source Voltage (Vgs) :

8V

Operating Mode :

ENHANCEMENT MODE

Number of Channels :

2

Operating Temperature :

-55°C~150°C TJ

Pin Count :

3

Rise Time :

11.5ns

Gate Charge (Qg) (Max) @ Vgs :

0.85nC @ 4.5V

Vgs(th) (Max) @ Id :

1V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

70.13pF @ 15V

Case Connection :

DRAIN

ECCN Code :

EAR99

Vgs (Max) :

±8V

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Mounting Type :

Surface Mount

Turn On Delay Time :

4.1 ns

Time@Peak Reflow Temperature-Max (s) :

40

Package / Case :

3-UFDFN

Terminal Position :

BOTTOM

Number of Pins :

3

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Transistor Application :

SWITCHING

Turn-Off Delay Time :

34.8 ns

Additional Feature :

HIGH RELIABILITY, LOW THRESHOLD

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

3

Radiation Hardening :

No

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

1.3A Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Fall Time (Typ) :

20.9 ns

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Mount :

Surface Mount

Number of Elements :

1