DMN2600UFB-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

17 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

1.3A Ta

Published :

2011

Terminal Position :

BOTTOM

JESD-609 Code :

e4

Turn On Delay Time :

4.1 ns

Power Dissipation-Max :

540mW Ta

Vgs (Max) :

±8V

Configuration :

SINGLE WITH BUILT-IN DIODE

REACH SVHC :

No SVHC

Pbfree Code :

yes

FET Type :

N-Channel

Continuous Drain Current (ID) :

1.3A

Additional Feature :

HIGH RELIABILITY, LOW THRESHOLD

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

1V @ 250μA

Transistor Element Material :

SILICON

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

40

Gate to Source Voltage (Vgs) :

8V

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

0.85nC @ 4.5V

Package / Case :

3-UFDFN

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Pin Count :

3

Turn-Off Delay Time :

34.8 ns

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

350m Ω @ 200mA, 4.5V

Drain to Source Voltage (Vdss) :

25V

Radiation Hardening :

No

Number of Channels :

2

Rise Time :

11.5ns

Mount :

Surface Mount

Fall Time (Typ) :

20.9 ns

Number of Elements :

1

Transistor Application :

SWITCHING

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Input Capacitance (Ciss) (Max) @ Vds :

70.13pF @ 15V