DMN2550UFA-7B

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Turn On Delay Time :

7.1 ns

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.45Ohm

Factory Lead Time :

15 Weeks

Rds On (Max) @ Id, Vgs :

450m Ω @ 200mA, 4.5V

Continuous Drain Current (ID) :

600mA

Terminal Form :

NO LEAD

Drain to Source Breakdown Voltage :

20V

Number of Pins :

3

Published :

2014

Rise Time :

11ns

Number of Elements :

1

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

JESD-30 Code :

R-PSSO-N2

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

0.6A

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Element Configuration :

Single

JESD-609 Code :

e4

Turn-Off Delay Time :

105 ns

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Number of Terminations :

2

Vgs(th) (Max) @ Id :

1V @ 250μA

ECCN Code :

EAR99

Package / Case :

3-XFDFN

Capacitance :

52.5pF

Fall Time (Typ) :

36 ns

Gate Charge (Qg) (Max) @ Vgs :

0.88nC @ 4.5V

Current - Continuous Drain (Id) @ 25°C :

600mA Ta

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

8V

Mount :

Surface Mount

Vgs (Max) :

±8V

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

360mW Ta

Number of Channels :

1

Input Capacitance (Ciss) (Max) @ Vds :

52.5pF @ 16V