DMN2500UFB4-7
- Mfr.Part #
- DMN2500UFB4-7
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 810MA 3DFN
- Stock
- 45,631
- In Stock :
- 45,631
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Additional Feature :
- High Reliability
- Number of Channels :
- 1
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- Turn On Delay Time :
- 5.1 ns
- Current - Continuous Drain (Id) @ 25°C :
- 810mA Ta
- Gate Charge (Qg) (Max) @ Vgs :
- 0.74nC @ 4.5V
- JESD-609 Code :
- e4
- FET Type :
- N-Channel
- Number of Pins :
- 3
- Vgs (Max) :
- ±6V
- Height :
- 350μm
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- 3-XFDFN
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 60.67pF @ 16V
- Length :
- 1.05mm
- Terminal Position :
- BOTTOM
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Lead Free :
- Lead Free
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Breakdown Voltage :
- 20V
- REACH SVHC :
- No SVHC
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Gate to Source Voltage (Vgs) :
- 6V
- Drain-source On Resistance-Max :
- 0.4Ohm
- Drain Current-Max (Abs) (ID) :
- 1A
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Rise Time :
- 7.4ns
- Radiation Hardening :
- No
- Width :
- 650μm
- Power Dissipation-Max :
- 460mW Ta
- Rds On (Max) @ Id, Vgs :
- 400m Ω @ 600mA, 4.5V
- Case Connection :
- DRAIN
- Published :
- 2012
- Turn-Off Delay Time :
- 26.7 ns
- Continuous Drain Current (ID) :
- 810mA
- Fall Time (Typ) :
- 12.3 ns
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Element Configuration :
- Single
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Number of Terminations :
- 3
- Datasheets
- DMN2500UFB4-7

N-Channel Tape & Reel (TR) 400m Ω @ 600mA, 4.5V ±6V 60.67pF @ 16V 0.74nC @ 4.5V 3-XFDFN
DMN2500UFB4-7 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 60.67pF @ 16V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 810mA. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=20V. And this device has 20V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 1A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 26.7 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 5.1 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 6V.By using drive voltage (1.8V 4.5V), this device helps reduce its overall power consumption.
DMN2500UFB4-7 Features
a continuous drain current (ID) of 810mA
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 26.7 ns
DMN2500UFB4-7 Applications
There are a lot of Diodes Incorporated
DMN2500UFB4-7 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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