DMN24H3D5L-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

0.48A

Power Dissipation-Max :

760mW Ta

Mounting Type :

Surface Mount

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Continuous Drain Current (ID) :

480mA

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

6.6nC @ 10V

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e3

Published :

2015

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PDSO-G3

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

3.5 Ω @ 300mA, 10V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Drain to Source Voltage (Vdss) :

240V

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

240V

Current - Continuous Drain (Id) @ 25°C :

480mA Ta

Input Capacitance (Ciss) (Max) @ Vds :

188pF @ 25V

FET Type :

N-Channel

Vgs (Max) :

±20V

Terminal Finish :

Matte Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

3.3V 10V

Number of Terminations :

3

Factory Lead Time :

23 Weeks

ECCN Code :

EAR99