DMN2400UV-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

ECCN Code :

EAR99

Terminal Form :

Flat

Weight :

3.005049mg

Gate Charge (Qg) (Max) @ Vgs :

0.5nC @ 4.5V

Rise Time :

7.28ns

Drain to Source Voltage (Vdss) :

20V

Fall Time (Typ) :

10.54 ns

Radiation Hardening :

No

Number of Elements :

2

Max Power Dissipation :

530mW

Pin Count :

6

FET Feature :

Logic Level Gate

Width :

1.25mm

FET Type :

2 N-Channel (Dual)

Input Capacitance (Ciss) (Max) @ Vds :

36pF @ 16V

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

4.06 ns

REACH SVHC :

No SVHC

Gate to Source Voltage (Vgs) :

12V

Number of Pins :

6

Threshold Voltage :

900mV

Package / Case :

SOT-563, SOT-666

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

480m Ω @ 200mA, 5V

Power Dissipation :

530mW

Transistor Application :

SWITCHING

Additional Feature :

HIGH RELIABILITY, LOW THRESHOLD

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Continuous Drain Current (ID) :

1.33A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

13.74 ns

Packaging :

Digi-Reel®

Length :

1.7mm

Height :

600μm

Element Configuration :

Dual

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

14 Weeks

Resistance :

500MOhm

Number of Terminations :

6

Contact Plating :

Tin

Mount :

Surface Mount

Published :

2017

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

900mV @ 250μA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Type :

Surface Mount