DMN2400UFB4-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

4.11 ns

JESD-609 Code :

e4

Continuous Drain Current (ID) :

750mA

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

36pF @ 16V

Additional Feature :

HIGH RELIABILITY, LOW THRESHOLD

Drain Current-Max (Abs) (ID) :

0.75A

Factory Lead Time :

6 Weeks

Radiation Hardening :

No

Published :

2011

Current - Continuous Drain (Id) @ 25°C :

750mA Ta

Fall Time (Typ) :

9.6 ns

Width :

675μm

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Case Connection :

DRAIN

Turn-Off Delay Time :

14.8 ns

Number of Channels :

1

Rise Time :

3.82ns

Power Dissipation-Max :

470mW Ta

Vgs(th) (Max) @ Id :

900mV @ 250μA

Mounting Type :

Surface Mount

Contact Plating :

Gold

DS Breakdown Voltage-Min :

20V

REACH SVHC :

No SVHC

Pin Count :

3

Gate to Source Voltage (Vgs) :

12V

Height :

350μm

Vgs (Max) :

±12V

Time@Peak Reflow Temperature-Max (s) :

40

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.55Ohm

Rds On (Max) @ Id, Vgs :

550m Ω @ 600mA, 4.5V

RoHS Status :

ROHS3 Compliant

Length :

1.08mm

Drain to Source Voltage (Vdss) :

20V

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Number of Terminations :

3

Terminal Position :

BOTTOM

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Package / Case :

3-XFDFN

Transistor Application :

SWITCHING

Element Configuration :

Single

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

0.5nC @ 4.5V