DMN2320UFB4-7B

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

1A

Power Dissipation-Max :

520mW Ta

Transistor Element Material :

SILICON

Published :

2015

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

320m Ω @ 500mA, 4.5V

ECCN Code :

EAR99

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

1A

Terminal Position :

BOTTOM

Factory Lead Time :

15 Weeks

Number of Pins :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±8V

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

0.89nC @ 4.5V

Package / Case :

3-XFDFN

Input Capacitance (Ciss) (Max) @ Vds :

71pF @ 10V

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

DS Breakdown Voltage-Min :

20V

Terminal Form :

NO LEAD

Number of Terminations :

3

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

20V

Current - Continuous Drain (Id) @ 25°C :

1A Ta

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

950mV @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

JESD-609 Code :

e4

Case Connection :

DRAIN