DMN2300UFD-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

REACH SVHC :

No SVHC

Rise Time :

6.93ns

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Terminal Position :

Dual

Package / Case :

3-UDFN

Vgs(th) (Max) @ Id :

950mV @ 250μA

Turn On Delay Time :

4.92 ns

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±8V

Gate to Source Voltage (Vgs) :

8V

Number of Channels :

1

Drain to Source Voltage (Vdss) :

20V

Transistor Application :

SWITCHING

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

200m Ω @ 900mA, 4.5V

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

JESD-609 Code :

e4

Number of Pins :

3

Number of Terminations :

3

Published :

2011

Input Capacitance (Ciss) (Max) @ Vds :

67.62pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

40

DS Breakdown Voltage-Min :

20V

Factory Lead Time :

17 Weeks

Pin Count :

3

Radiation Hardening :

No

Pbfree Code :

yes

Fall Time (Typ) :

10.62 ns

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Continuous Drain Current (ID) :

1.73A

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

1.21A Ta

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

470mW Ta

Drain-source On Resistance-Max :

0.2Ohm

Additional Feature :

LOW THRESHOLD

Number of Elements :

1

Turn-Off Delay Time :

21.71 ns

Gate Charge (Qg) (Max) @ Vgs :

2nC @ 4.5V

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON