DMN2300UFB4-7B

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2012

Turn On Delay Time :

3.5 ns

Package / Case :

3-XFDFN

Pin Count :

3

Rds On (Max) @ Id, Vgs :

175m Ω @ 300mA, 4.5V

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Mount :

Surface Mount

Transistor Element Material :

SILICON

Number of Elements :

1

Turn-Off Delay Time :

38 ns

Vgs (Max) :

±8V

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

400μm

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Max Junction Temperature (Tj) :

150°C

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Length :

1.05mm

Continuous Drain Current (ID) :

1.3A

Number of Terminations :

3

Rise Time :

2.8ns

Current - Continuous Drain (Id) @ 25°C :

1.3A Ta

Mounting Type :

Surface Mount

Number of Channels :

1

Input Capacitance (Ciss) (Max) @ Vds :

64.3pF @ 25V

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Packaging :

Tape and Reel (TR)

REACH SVHC :

No SVHC

Additional Feature :

HIGH RELIABILITY, LOW THRESHOLD

Time@Peak Reflow Temperature-Max (s) :

40

JESD-609 Code :

e4

ECCN Code :

EAR99

Width :

650μm

Drain to Source Breakdown Voltage :

20V

Case Connection :

DRAIN

Fall Time (Typ) :

13 ns

Vgs(th) (Max) @ Id :

950mV @ 250μA

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

1.6nC @ 4.5V

Resistance :

175mOhm

Threshold Voltage :

950mV

Terminal Position :

BOTTOM

Gate to Source Voltage (Vgs) :

8V

Power Dissipation-Max :

500mW Ta

Power Dissipation :

500mW

Factory Lead Time :

16 Weeks