DMN2300UFB-7B

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

40

Vgs (Max) :

±8V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Package / Case :

3-UFDFN

Gate Charge (Qg) (Max) @ Vgs :

0.89nC @ 4.5V

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Rds On (Max) @ Id, Vgs :

175m Ω @ 300mA, 4.5V

Mounting Type :

Surface Mount

Radiation Hardening :

No

ECCN Code :

EAR99

Fall Time (Typ) :

10.62 ns

Vgs(th) (Max) @ Id :

950mV @ 250μA

Case Connection :

DRAIN

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

468mW Ta

RoHS Status :

ROHS3 Compliant

Number of Channels :

1

Continuous Drain Current (ID) :

1.78A

JESD-609 Code :

e4

Peak Reflow Temperature (Cel) :

260

Number of Pins :

3

Pbfree Code :

yes

Additional Feature :

HIGH RELIABILITY, LOW THRESHOLD

Transistor Application :

SWITCHING

Turn On Delay Time :

4.92 ns

Drain to Source Breakdown Voltage :

20V

Turn-Off Delay Time :

21.71 ns

REACH SVHC :

No SVHC

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

1.32A Ta

Packaging :

Tape and Reel (TR)

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Number of Elements :

1

Factory Lead Time :

17 Weeks

Rise Time :

6.93ns

Published :

2015

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

8V

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

67.62pF @ 20V

Number of Terminations :

3

Transistor Element Material :

SILICON

Terminal Position :

BOTTOM