DMN2250UFB-7B

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

3.1nC @ 10V

Terminal Position :

BOTTOM

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Additional Feature :

High Reliability

Peak Reflow Temperature (Cel) :

260

Turn-Off Delay Time :

59.4 ns

Fall Time (Typ) :

25.4 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Number of Pins :

3

Turn On Delay Time :

4.3 ns

Vgs(th) (Max) @ Id :

1V @ 250μA

Gate to Source Voltage (Vgs) :

8V

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

170m Ω @ 1A, 4.5V

Radiation Hardening :

No

Published :

2013

Packaging :

Cut Tape (CT)

Height :

480μm

DS Breakdown Voltage-Min :

20V

Current - Continuous Drain (Id) @ 25°C :

1.35A Ta

Time@Peak Reflow Temperature-Max (s) :

30

Rise Time :

6.1ns

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

1.35A

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Power Dissipation-Max :

500mW Ta

Factory Lead Time :

6 Weeks

Number of Terminations :

3

Length :

1.08mm

Width :

675μm

Mount :

Surface Mount

JESD-609 Code :

e4

Package / Case :

3-UFDFN

Drain-source On Resistance-Max :

0.25Ohm

Element Configuration :

Single

Vgs (Max) :

±8V

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

20V

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

94pF @ 16V

Number of Channels :

1