DMN2215UDM-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Additional Feature :

High Reliability

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

20V

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

12V

Transistor Element Material :

SILICON

Number of Terminations :

6

Factory Lead Time :

19 Weeks

Length :

3mm

Pbfree Code :

yes

Turn On Delay Time :

8 ns

Number of Pins :

6

FET Type :

2 N-Channel (Dual)

Operating Temperature :

-55°C~150°C TJ

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

2A

Rds On (Max) @ Id, Vgs :

100m Ω @ 2.5A, 4.5V

Element Configuration :

Dual

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

1V @ 250μA

Package / Case :

SOT-23-6

Transistor Application :

SWITCHING

Published :

2008

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

3.8ns

Input Capacitance (Ciss) (Max) @ Vds :

188pF @ 10V

Drain Current-Max (Abs) (ID) :

2A

Drain-source On Resistance-Max :

0.1Ohm

Turn-Off Delay Time :

19.6 ns

Peak Reflow Temperature (Cel) :

260

Max Power Dissipation :

650mW

Drain to Source Breakdown Voltage :

20V

Pin Count :

6

Contact Plating :

Tin

Number of Elements :

2

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Fall Time (Typ) :

3.8 ns

Height :

1.1mm

Time@Peak Reflow Temperature-Max (s) :

40

Mount :

Surface Mount

Base Part Number :

DMN2215UDM

Width :

1.6mm

Lead Free :

Lead Free

FET Feature :

Logic Level Gate

Power Dissipation :

650mW

Qualification Status :

Not Qualified

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE