DMN2215UDM-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Voltage (Vdss) :

20V

Length :

3mm

Power Dissipation :

650mW

Element Configuration :

Dual

Fall Time (Typ) :

3.8 ns

Drain-source On Resistance-Max :

0.1Ohm

Drain to Source Breakdown Voltage :

20V

Turn-Off Delay Time :

19.6 ns

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

188pF @ 10V

Drain Current-Max (Abs) (ID) :

2A

Mount :

Surface Mount

Turn On Delay Time :

8 ns

FET Feature :

Logic Level Gate

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

19 Weeks

Additional Feature :

High Reliability

ECCN Code :

EAR99

Number of Terminations :

6

Base Part Number :

DMN2215UDM

Pin Count :

6

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

2A

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

FET Type :

2 N-Channel (Dual)

Rds On (Max) @ Id, Vgs :

100m Ω @ 2.5A, 4.5V

Vgs(th) (Max) @ Id :

1V @ 250μA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

2

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

12V

Contact Plating :

Tin

Package / Case :

SOT-23-6

Rise Time :

3.8ns

Published :

2008

Terminal Form :

Gull wing

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Max Power Dissipation :

650mW

Number of Pins :

6

Lead Free :

Lead Free

REACH SVHC :

No SVHC

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

40

Width :

1.6mm

Height :

1.1mm

Transistor Element Material :

SILICON