DMN21D2UFB-7B

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

0.76A

DS Breakdown Voltage-Min :

20V

Drain-source On Resistance-Max :

0.99Ohm

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

760mA Ta

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Length :

1.08mm

Additional Feature :

High Reliability

Number of Channels :

1

Vgs(th) (Max) @ Id :

1V @ 250μA

Turn-Off Delay Time :

19.6 ns

Package / Case :

3-UFDFN

Terminal Position :

BOTTOM

Published :

2012

Transistor Element Material :

SILICON

Width :

675μm

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

FET Type :

N-Channel

Vgs (Max) :

±12V

Continuous Drain Current (ID) :

760mA

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

260

Fall Time (Typ) :

9.8 ns

Pbfree Code :

yes

Number of Pins :

3

Gate to Source Voltage (Vgs) :

12V

Mount :

Surface Mount

Turn On Delay Time :

3.5 ns

Factory Lead Time :

15 Weeks

JESD-609 Code :

e4

Lead Free :

Lead Free

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

40

Power Dissipation-Max :

380mW Ta

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Gate Charge (Qg) (Max) @ Vgs :

0.93nC @ 10V

Mounting Type :

Surface Mount

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

990m Ω @ 100mA, 4.5V

Drain to Source Voltage (Vdss) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

27.6pF @ 16V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Height :

480μm

Rise Time :

4.2ns