DMN2114SN-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Additional Feature :

High Reliability

Time@Peak Reflow Temperature-Max (s) :

40

Published :

2011

JESD-609 Code :

e3

Number of Elements :

1

Power Dissipation :

500mW

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

100m Ω @ 500mA, 4.5V

Vgs (Max) :

±12V

Number of Terminations :

3

Weight :

7.994566mg

Continuous Drain Current (ID) :

1.2A

Power Dissipation-Max :

500mW Ta

Width :

1.7mm

REACH SVHC :

No SVHC

Element Configuration :

Single

Vgs(th) (Max) @ Id :

1.4V @ 1mA

Current - Continuous Drain (Id) @ 25°C :

1.2A Ta

Radiation Hardening :

No

Rise Time :

15ns

Length :

3.1mm

Number of Channels :

1

JESD-30 Code :

R-PDSO-G3

Operating Temperature :

-55°C~150°C TJ

Height :

1.3mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Factory Lead Time :

6 Weeks

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

12V

Terminal Form :

Gull wing

Pin Count :

3

Mount :

Surface Mount

Turn On Delay Time :

10 ns

Terminal Finish :

Matte Tin (Sn)

ECCN Code :

EAR99

Package / Case :

TO-236-3, SC-59, SOT-23-3

Turn-Off Delay Time :

50 ns

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

180pF @ 10V

Drain to Source Breakdown Voltage :

20V

Fall Time (Typ) :

15 ns

Transistor Application :

SWITCHING